PBSS9110Z Datasheet PDF - NXP Semiconductors


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PBSS9110Z
NXP Semiconductors

Part Number PBSS9110Z
Description 1A PNP low VCEsat (BISS) transistor
Page 14 Pages

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PBSS9110Z
100 V, 1 A PNP low VCEsat (BISS) transistor
Rev. 03 — 11 December 2009
www.DataSheet4U.com
Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73)
small Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS8110Z.
1.2 Features
„ Low collector-emitter saturation voltage VCEsat
„ High collector current capability IC and ICM
„ High collector current gain (hFE) at high IC
„ High efficiency due to less heat generation
„ Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
„ High-voltage DC-to-DC conversion
„ High-voltage MOSFET gate driving
„ High-voltage motor control
„ High-voltage power switches (e.g. motors, fans)
„ Automotive applications
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
VCEO collector-emitter voltage
IC collector current
ICM peak collector current
RCEsat collector-emitter
saturation resistance
[1] Pulse test: tp 300 μs; δ ≤ 0.02.
Conditions
open base
single pulse;
tp 1 ms
IC = 1 A;
IB = 100 mA
Min Typ Max
Unit
- - 100 V
- - 1 A
- - 3 A
[1] -
170 320
mΩ



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PBSS9110Zw w w . D a t a S h e e t 4 U . c
100 V, 1 A PNP low VCEsat (BISS) transistor
2. Pinning information
Table 2.
Pin
1
2
3
4
Pinning
Description
base
collector
emitter
collector
Simplified outline Symbol
4 2, 4
123
1
3
sym028
3. Ordering information
Table 3. Ordering information
Type number Package
Name Description
Version
PBSS9110Z SC-73
plastic surface-mounted package with increased heat sink; SOT223
4 leads
4. Marking
Table 4. Marking codes
Type number
PBSS9110Z
Marking code
PB9110
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
VCBO
VCEO
VEBO
IC
ICM
IB
Ptot
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
base current
total power dissipation
open emitter
open base
open collector
single pulse;
tp 1 ms
Tamb 25 °C
-
-
-
-
-
-
[1] -
[2] -
[3] -
Max
120
100
5
1
3
Unit
V
V
V
A
A
0.3 A
0.65 W
1W
1.4 W
PBSS9110Z_3
Product data sheet
Rev. 03 — 11 December 2009
© NXP B.V. 2009. All rights reserved.
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PBSS9110Zw w w . D a t a S h e e t 4 U . c o
100 V, 1 A PNP low VCEsat (BISS) transistor
Table 5. Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Tj
Tamb
Tstg
junction temperature
ambient temperature
storage temperature
-
65
65
Max
150
+150
+150
Unit
°C
°C
°C
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1cm2.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6cm2.
1.6
Ptot
(W)
1.2
0.8
0.4
(1)
(2)
(3)
001aaa508
0
0 40 80
(1) FR4 PCB, mounting pad for collector 6cm2
(2) FR4 PCB, mounting pad for collector 1cm2
(3) FR4 PCB, standard footprint
Fig 1. Power derating curves
120 160
Tamb (°C)
6. Thermal characteristics
Table 6.
Symbol
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
Rth(j-sp)
thermal resistance from
junction to solder point
Conditions
in free air
Min Typ Max Unit
[1] - - 192 K/W
[2] - - 125 K/W
[3] - - 89 K/W
- - 17 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1cm2.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6cm2.
PBSS9110Z_3
Product data sheet
Rev. 03 — 11 December 2009
© NXP B.V. 2009. All rights reserved.
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PBSS9110Zwww.DataSheet4U.com
100 V, 1 A PNP low VCEsat (BISS) transistor
103
Zth(j-a)
(K/W)
102
10
duty cycle =
1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
10
006aaa819
101
105
104
103
102
101
1
10 102 103
tp (s)
FR4 PCB, standard footprint
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
103
Zth(j-a)
(K/W)
102
10
1
duty cycle =
1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
0
006aaa820
101
105
104
103
102
101
1
10 102 103
tp (s)
FR4 PCB, mounting pad for collector 1cm2
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PBSS9110Z_3
Product data sheet
Rev. 03 — 11 December 2009
© NXP B.V. 2009. All rights reserved.
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