PBSS3540M Datasheet PDF - Philips

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PBSS3540M
Philips

Part Number PBSS3540M
Description PNP low V transistor
Page 9 Pages


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DISCRETE SEMICONDUCTORS
DATA SHEET
BOTTOM VIEW
M3D883
PBSS3540M
40 V, 0.5 A
PNP low VCEsat (BISS) transistor
Product specification
2003 Aug 12



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Philips Semiconductors
40 V, 0.5 A
PNP low VCEsat (BISS) transistor
Product specification
PBSS3540M
FEATURES
Low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High efficiency leading to reduced heat generation
Reduced printed-circuit board requirements.
APPLICATIONS
Power management:
– DC-DC converter
– Supply line switching
– Battery charger
– LCD backlighting.
Peripheral driver:
– Driver in low supply voltage applications (e.g. lamps
and LEDs).
– Inductive load drivers (e.g. relays, buzzers and
motors).
DESCRIPTION
Low VCEsat PNP transistor in a SOT883 leadless ultra
small plastic package.
NPN complement: PBSS2540M.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCEO
IC
ICM
RCEsat
collector-emitter voltage
collector current (DC)
peak collector current
equivalent on-resistance
MAX. UNIT
40
500
1
<700
V
mA
A
m
PINNING
PIN
1 base
2 emitter
3 collector
DESCRIPTION
handbook, halfpag2e
1
Bottom view
3
31
MAM469
2
MARKING
TYPE NUMBER
PBSS3540M
MARKING CODE
DA
Fig.1 Simplified outline (SOT883) and symbol.
2003 Aug 12
2



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Philips Semiconductors
40 V, 0.5 A
PNP low VCEsat (BISS) transistor
Product specification
PBSS3540M
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
Tstg
Tj
Tamb
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base
open collector
notes 1 and 2
Tamb 25 °C; notes 1 and 2
Tamb 25 °C; note 1 and 3
MIN.
65
65
MAX.
40
40
6
500
1
100
250
430
+150
150
+150
UNIT
V
V
V
mA
A
mA
mW
mW
°C
°C
°C
Notes
1. Refer to SOT883 standard mounting conditions.
2. Device mounted on an FR4 printed-circuit board, single-sided copper, tinplated, standard footprint, with 60 µm
copper strip line.
3. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to
ambient
CONDITIONS
in free air; notes 1 and 2
in free air; notes 1, 3 and 4
VALUE
500
290
UNIT
K/W
K/W
Notes
1. Refer to SOT883 standard mounting conditions.
2. Device mounted on an FR4 printed-circuit board, single-sided copper, tinplated, standard footprint, with 60 µm
copper strip line.
3. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
4. Operated under pulsed conditions: duty cycle δ ≤ 20%, pulse width tp 30 ms.
Soldering
Reflow soldering is the only recommended soldering method.
2003 Aug 12
3



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Philips Semiconductors
40 V, 0.5 A
PNP low VCEsat (BISS) transistor
Product specification
PBSS3540M
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
ICBO
IEBO
hFE
VCEsat
RCEsat
VBEsat
VBEon
fT
collector-base cut-off current
VCB = 30 V; IE = 0
VCB = 30 V; IE = 0; Tj = 150 °C
emitter-base cut-off current
VEB = 5 V; IC = 0
DC current gain
VCE = 2 V; IC = 10 mA
VCE = 2 V; IC = 100 mA; note 1
VCE = 2 V; IC = 500 mA; note 1
collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA
IC = 100 mA; IB = 5 mA
IC = 200 mA; IB = 10 mA
IC = 500 mA; IB = 50 mA; note 1
equivalent on-resistance
IC = 500 mA; IB = 50 mA; note 1
base-emitter saturation voltage IC = 500 mA; IB = 50 mA; note 1
base-emitter turn-on voltage
VCE = 2 V; IC = 100 mA; note 1
transition frequency
IC = 100 mA; VCE = 5 V;
f = 100 MHz
Cc collector capacitance
VCB = 10 V; IE = Ie = 0; f = 1 MHz
MIN.
200
150
40
100
TYP.
440
300
MAX. UNIT
100 nA
50 µA
100 nA
50 mV
130 mV
200 mV
350 mV
<700 m
1.2 V
1.1 V
MHz
10 pF
Note
1. Pulse test: tp 300 µs; δ ≤ 0.02.
2003 Aug 12
4



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