PBL40310 Datasheet PDF - Ericsson

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PBL40310
Ericsson

Part Number PBL40310
Description 3.5 V GSM 900 MHz Power Amplifier
Page 4 Pages


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Advance information
PBMLarc4h03201001
PBL 403 10
3.5 V GSM 900 MHz Power Amplifier
Description.
Key features.
The PBL 40310 is a highly integrated single-ended silicon MMIC power amplifier • 2.7 to 5.0 V single supply operation
intended for use in GSM terminals. It delivers 35 dBm at 900 MHz with 55 % power added
efficiency into a 50 unbalanced load using a single 3.5 V supply.
• 35 dBm output power at 3.5 V
The circuit has an analog ramp signal to control output power level and a logical on/
off signal for power down mode. It can be used in dual-band amplifiers using the band • 55 % Power Added Efficiency
select logical signal. It can be operated up to 50 % duty cycle with minimum performance
degradation. The circuit is housed in a specially designed QSOP16 (150 mil body) • Input matched to 50
package and the implementation requires only few external components.
25 GHz ft state-of-the-art deep trench isolated double-poly silicon bipolar process • Complete on chip input and
with additional features for improved wireless performance has been used. On-chip
interstage matching
capacitors and inductors are used for the integrated internal matching network. Special
front-side metallized substrate contacts provide excellent ground paths from active • Analog power control
devices to the highly doped semiconductor substrate and package ground.
• Less than 10 µA current
consumption in power down mode
• Proven RF Silicon Technology
Reliability
V CC
• Minimum number of external
components for low overall solution
cost
RFin
Power
Control
BIAS
RFout
B SEL
TX - ON
PBL 40310
Figure 1. Block diagram.
Figure 2. Package outlook.
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PBL 403 10
Maximum Ratings
Parameter
Supply voltage, continuous
Power control voltage
Input power
Operating Case Temperature
Storage Temperature Range
Conditions
DC Electrical Characteristics
V
CC
=
3.5
V,
T=
A
+
25°C
unless
otherwise
stated.
Parameter
Conditions
Supply voltage range
Supply current
Standby supply current
Power down leakage current
Input current, VAPC
VAPC= 2.5 V, no RF signal applied
VAPC<=0.5 V, TX-ON=HIGH
VAPC<= 0.5 V, TX-ON=LOW
0 < VAPC < 3.5 V
Symbol
V
CC
VAPC
PIN
TOP
TSTORAGE
Symbol
V
CC
ICC
ISTBY
ILEAK
Min.
-0.5
-0.5
-40
-30
Typ.
Max.
6.0
6.0
+20
+85
+100
Unit
V
V
dBm
°C
°C
Min.
2.7
Typ.
150
2.0
Max.
5.0
3.0
5.0
3.0
Unit
V
mA
mA
µA
mA
AC Electrical Characteristics
V
CC
=
3.5
V,
f
IN
=
900
MHz,
P
IN
=
8
dBm,
V
APC
=
2.5
V,
TX-ON
=
high
(V ),
CC
BSEL
=
low
(GND),
duty
cycle
=
12.5
%,
pulse
width
=
577
µs,
T
A
=
+25°C
unless
otherwise
stated.
All
data
measured
on
evaluation
board.
Parameter
Frequency range
Input impedance
Input VSWR
Recommended input power
Power gain
Output power
Power added efficiency
Output power
2 nd harmonic
3 rd harmonic
Output Noise
Output Noise
Forward isolation
Stability, load VSWR
Ruggedness, load VSWR
Power control for max. POUT
Power control for min. POUT
Power control slope
Conditions
PIN = -10 to +20 dBm
PIN = 0 dBm
VCC = 2.9 V
RBW=100 kHz, f=925 to 935 MHz
RBW=100 kHz, f=925 to 960 MHz
V < 0.5 V, P = -10 to + 10 dBm
APC
IN
All phases, no oscillations.
All phases, no damage.
POUT< -30 dBm
-10 dBm < POUT< 35 dBm
Symbol
fIN
ZIN
VSWR
P
IN
GP
P
OUT
η
POUT
2 fo
3 fo
VSWR
VSWR
VAPC
VAPC
Min.
880
8.0
30
34.5
50
2.5
Typ.
50
2:1
31
35
55
33
tbd
tbd
tbd
tbd
-25
tbd
Max.
915
12.0
6:1
10:1
0.5
tbd
Unit
MHz
dBm
dB
dBm
%
dBm
dBc
dBc
dBm
dBm
dB
V
V
dB/V
This document contains advance information of a new product. Data given in this document shall be considered as preliminary
and may be changed without notice.
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PBL 403 10
Vcc 1
Vcc 2
GND 3
RFin 4
GND 5
TX-ON 6
BSEL 7
VAPC 8
Figure 3. Pin configuration.
Pin Descriptions:
Refer to pin configuration.
SO Name
Function
1 Vcc
Supply voltage
2 Vcc
Supply voltage
3 GND
Common ground
4 RFin
RF input
5 GND
Common ground
6 TX-ON
Transmit ON
7 BSEL
Band select
8 VAPC
Power control voltage
16 GND
15 GND
14 GND
13 RFout
12 RFout
11 GND
10 GND
9 GND
SO Name
9 GND
10 GND
11 GND
12 RFout
13 RFout
14 GND
15 GND
16 GND
Function
Common ground
Common ground
Common ground
RF output
RF output
Common ground
Common ground
Common ground
40
35
30
25
20
15
10
5
0
-10
Output power (dBm)
Gain (dB)
Efficiency (%)
-5 0
5 10 15
Pin (dBm)
Figure 4. RF performance.
80
70
60
50
40
30
20
10
0
V CC
RFin
4
Power
Control
8
12
BIAS
12
13
7 B SEL
6 TX-ON
RFout
Common ground
Figure 5. Evaluation setup including network for unbalanced
input/output.
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PBL 403 10
Package drawing, QSOP 16
D
e
EH
millimeters
Dim. min. max.
A 1.35
A1 0.10
1.75
0.25
B 0.21 0.31
C 0.19 0.25
D 9.80 9.98
E 3.81 3.99
e 0.635mm
H 5.70 6.20
L 0.41
α = 0−8 deg.
1.27
inches
min. max.
0.532
0.004
0.008
0.0075
0.688
0.0098
0.012
0.0098
0.386 0.393
0.150 0.157
0.025 inch ref.
0.2284 0.2240
0.016 0.050
Pin no 1
B
A
A1
45 deg.
C
L
α
Note: This package has been chosen as a preliminary package. It will possibly be changed to a smaller solution.
This document contains advance information of a new product. Data given in this document shall be considered as preliminary
and may bechanged without notice.
Information given in this data sheet is believed to be accurate and reliable. However no responsibility is assumed
for the consequences of its use nor for any infringement of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Ericsson
Microelectronics AB. These products are sold only according to Ericsson Microelectronics AB's general conditions
of sale, unless otherwise confirmed in writing.
Specifications subject to change without
notice.
1522-PBL 403 10 Uen Rev.A
© Ericsson Microelectronics AB
March 2001
Ericsson Microelectronics AB
S-164 81 Kista-Stockholm, Sweden
Telephone: (08) 757 50 00
www.ericsson.se/microe
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PBL40310 3.5 V GSM 900 MHz Power Amplifier PBL40310
Ericsson
PBL40310 pdf

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