PBL40305 Datasheet PDF - Ericsson

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PBL40305
Ericsson

Part Number PBL40305
Description Multiband GSM Power Amplifier
Page 7 Pages


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PJaBnLua4ry03200051
PBL 403 05
Multiband GSM Power Amplifier
Description.
Key features.
The PBL 403 05 is a dual line-up GaAs MMIC power amplifier intended for use in • One IC handles GSM900, DCS
multiband GSM terminals. Powered of a 3.2V supply it delivers more than 34.5 dBm
1800 and PCS1900 bands.
output power at GSM900 and more than 31.5 dBm output power at DCS1800 or
PCS1900 frequencies.
• Low cost solution.
The circuit uses an analog control signal to control the output power level. The circuit
is housed in a specially designed QSOP28 (150 mil body) package with no special • Inputs matched to 50
mounting requirements.
The circuit is manufactured in a high performance MESFET process that ensures • Digital band select function.
ruggednes for environmental variations.
• Analog gain control.
• Proven GaAs MESFET-reliability.
• Tape and Reel.
• SMD QSOP 28 package.
VD1_DCS
VD2_DCS
RFIN_DCS
CA VDC
Current generator
VD3_DCS
RFIN_GSM
VD1_GSM
VD2_GSM
Figure 1. Block diagram.
RFOUTGSM
BIAS
VD3GSM VNEG VSEL VAPC
Figure 2. Package outlook.
1



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PBL 403 05
Maximum Ratings:
T
AMB
=
+
25°C
unless
otherwise
stated.
Parameter
Conditions
Supply voltage
short supply spike
Supply voltage
Power control voltage
Operating Case Temperature
Storage Temperature Range
Symbol
VDD
VDD
V
APC
TCASE
T
STORAGE
Min.
-25
-30
Typ. Max. Unit
6.0 V
5.0 V
4.2 V
+80 °C
+100 °C
Electrical Characteristics for PA in GSM 900 mode:
VCC = 3.2 V, TAMB = + 25°C, Z = 50 , PIN = 10 dBm, f = 880 - 915 MHz and VAPC adjusted to give POUT = 34.5 dBm unless othervise
noted. Pulsed operation with pulse width of 577µs and a duty cycle of 1:8. VNEG= -4.0 V, VSEL= 0.0 V.
Parameter
Conditions
Symbol
Min.
Typ. Max. Unit
Output Power
Power added efficiency
2 nd harmonic
3 rd harmonic
Isolation
Power degradation
Stability and leakage spurious
Noise power
VAPC = 3.15 V
POUT
P
AE
- 0 dBm < POUT < 34.5 dBm
2 fo
- 0 dBm < P < 34.5 dBm
OUT
3f
o
PIN = 11.5 dBm, VAPC <= 0.5 V
TAMB = -25 °C to +75 °C
PIN = 8.5 dBm, VSEL= 0.6 V,
VAPC = 2.8 V, TAMB = -25 °C to +75 °C
Output VSWR = 6:1 all phases
All combinations of following
parameters:
P =5
OUT
to
34.5dBm(50)
VDD= 2.7 V to 5.1 V
TAMB = -25 °C to +75 °C
935 - 960 MHz
925 - 935 MHz
RBW = 30 kHz
34.5 34.7
50 53
-7.0 0
-27 0
-30 -20
33
No parasitic oscillations
when IDD < 2.2 A
All spurious < -36 dBm
dBm
%
dBm
dBm
dBm
dBm
-90 dBm
-78 dBm
Input S11
Input S11
VAPC = 0.5 V,
P = 34.5dBm
OUT
-5.2 -5.0 dBm
-12 -6.0 dBm
Electrical Characteristics for PA in DCS 1800 mode:
VCC = 3.2 V, TAMB = + 25°C, Z = 50 , PIN = 9 dBm, f = 1710 - 1785 MHz / 1850 - 1910 MHz and VAPC adjusted to give POUT = 31.5
dBm unless othervise noted. Pulsed operation with pulse width of 577µs and a duty cycle of 1:8. VNEG= -4.0 V, VSEL= 2.0 V.
Parameter
Conditions
Symbol
Min.
Typ. Max. Unit
Output Power
Power added efficiency
2 nd harmonic
3 rd harmonic
Isolation
Power degradation
VAPC = 3.15 V
POUT = 31.5 dBm
- 0 dBm < P < 31.5 dBm
OUT
- 0 dBm < POUT < 31.5 dBm
P = 10.5 dBm, V = 0.5 V
IN APC
T
AMB
=
-25
°C
to
+75
°C
PIN = 7.5 dBm, VDD = 2.85 V
VAPC = 2.8 V, TAMB = -25 °C to +75 °C
POUT
PAE
2f
o
3 fo
31.5 31.7
dBm
37 41
%
-8.0 0
dBm
-15 0
dBm
-35 -30 dBm
30 30.5
dBm
2



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Parameter
Stability and leakage spurious
Noise power
Input S11
Input S11
Conditions
Symbol
Output VSWR = 6:1 all phases
All combinations of following
parameters: POUT=5 to 31.5dBm(50)
VDD= 2.7 V to 5.1 V
TAMB = -25 °C to +75 °C
1805 - 1880 MHz
935 - 960 MHz RBW = 30 kHz
925 - 935 MHz
V = 0.5 V,
APC
POUT = 31.5dBm
Common specifications:
Parameter
Conditions
Isolation at GSM RF output
when DCS is active
f=f
0
f = 2 • f , f = 1750 - 1785 MHz
00
Symbol
Isolation at DCS RF output
when GSM is active
f = 2 • f0
f = 3 • f0, f0 = 880 - 915 MHz
Power regulation characteristics:
Parameter
Conditions
Power control range
Power control slope
Switching time
GSM: VAPC = 0.5 - 3.15 V
DCS: VAPC = 0.5 - 3.15 V
VAPC = 0.5 - 3.15 V
Step in Vref giving POUT = -15 to
32.5 dBm, up and down
Power control current
consumption
VAPC <= 3.15 V
V =0 -3V
SEL
Band select current consumption
Negative supply current
consumption
VSEL = 0 - 3 V, VAPC <= 3.15 V
VSEL = 0 V, VAPC <= 3.15 V
Symbol
IAPC
ISEL
INEG
Current generator:
Parameter
Input resistance
Charge current
Conditions
VDC- VCA < 0.8 V
VDC = 1.5 - 5.0 V, VCA = 0 V
Symbol
RON
IGSAT
PBL 403 05
Min.
Typ.
Max.
No parasitic oscillations
when I < 2.20 A
DD
All spurious < -36 dBm
RBW = 3 MHz
Unit
-76 dBm
-82 dBm
-70
-5.0 -4.0 dBm
-14 -6.0 dBm
Min.
Typ.
-18
-30
Max.
-20
-30
-15
-25
Unit
dBm
dBm
dBm
dBm
Min.
-20
-30
Typ.
Max.
34.5
31.5
150
2
Unit
dBm
dBm
dB/V
µs
4 5 mA
0.01 0.1
5.5 7.0
mA
mA
Min.
Typ.
100
6.7
Max.
150
10
Unit
mA
3



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PBL 403 05
Figure 3. Pin configuration.
CA 1
VNEG 2
VSEL 3
VAPC 4
VD1_DCS 5
GND 6
RFIN_DCS 7
GND 8
RFIN_GSM 9
GND 10
VD1_GSM 11
GND 12
VD3_GSM1 13
VD3_GSM2 14
28 VDC
27 GND
26 VD3_DCS2
25 VD3_DCS1
24 GND
23 GND
22 VD2_DCS
21 GND
20 VD2_GSM
19 GND
18 GND
17 RFOUT_GSM2
16 RFOUT_GSM1
15 GND
Terminal
1
2
3
4
5
6,8,10,12,15,
18,19,21,23,
24,27
7
9
11
13, 14
16,17
20
22
25,26
28
Symbol
CA
VNEG
VSEL
VAPC
VD1_DCS
GND
RFIN_DCS
RFIN_GSM
VD1_GSM
VD3_GSM
RFOUT_GSM
VD2_GSM
VD2_DCS
VD3_DCS
VDC
Function
Separate Current Source +terminal
Negative supply
Digital band select function
Analog output power control
Power supply for 1st stage of high band chain
AC coupled 50ohm input
AC coupled 50ohm input
Power supply for 1st stage of low band chain
Power supply for output stage stage of low band chain
Power supply for 2nd stage of low band chain
Power supply for 2nd stage of high band chain
RF output and power supply for output stage of high band chain
Separate Current Source -terminal
4



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