PB210BTF Datasheet PDF - UNIKC

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PB210BTF
UNIKC

Part Number PB210BTF
Description N-Channel Enhancement Mode MOSFET
Page 5 Pages


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PB210BTF
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
230mΩ @VGS = 10V
ID
8A
TO-220F
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
8
5
30
Avalanche Current
IAS 18
Avalanche Energy
L = 0.1mH
EAS
16
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
30
12
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
4.1
62.5
UNITS
°C / W
Ver 1.0
1 2012/4/16



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PB210BTF
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current1
Drain-Source On-State
Resistance1
Forward Transconductance1
ID(ON)
RDS(ON)
gfs
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
VDS = 80V, VGS = 0V
VDS = 80V, VGS = 0V , TJ = 125 °C
VDS = 5V, VGS = 10V
VGS = 5V, ID = 6A
VGS = 10V, ID = 6A
VDS = 5V, ID = 6A
100
1.0 1.5 2.0
±250
1
10
30
215 240
205 230
1.6
DYNAMIC
Input Capacitance
Output Capacitance
Ciss
Coss
VGS = 0V, VDS = 25V, f = 1MHz
697
74
Reverse Transfer Capacitance
Crss
41
Gate Resistance
Rg VGS = 0V, VDS = 0V, f = 1MHz
1.4
Total Gate Charge2
Qg
16
Gate-Source Charge2
Qgs VDS = 50V, VGS = 10V, ID = 6A
2
Gate-Drain Charge2
Qgd
5
Turn-On Delay Time2
td(on)
9
Rise Time2
tr VDD = 50V,
30
Turn-Off Delay Time2
td(off)
ID @ 6A, VGS = 10V, RGS = 6Ω
19
Fall Time2
tf
20
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = 6A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 6A, dlF/dt = 100A / μS
54.8
87
1Pulse test : Pulse Width 380 msec, Duty Cycle 2.
2Independent of operating temperature.
8
1.4
UNIT
V
nA
mA
A
mΩ
S
pF
Ω
nC
nS
A
V
nS
nC
Ver 1.0
2 2012/4/16



No Preview Available !

PB210BTF
N-Channel Enhancement Mode MOSFET
Ver 1.0
3 2012/4/16



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PB210BTF
N-Channel Enhancement Mode MOSFET
Ver 1.0
4 2012/4/16



PB210BTF datasheet pdf
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PB210BTF pdf
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UNIKC
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