PAT2008 Datasheet PDF - Nihon Inter Electronics

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PAT2008
Nihon Inter Electronics

Part Number PAT2008
Description THYRISTOR MODULE
Page 5 Pages


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THYRISTOR MODULE
200A / 800V
FEATURES
* Isolated Base
* Dual Thyristors or Thyristor and Diode
Anti-Parallel Circuit
* High Surge Capability
* UL Recognized, File No. E187184
TYPICAL APPLICATIONS
* Rectified For General Use
PAT
PAH
PAT2008 PAH2008
OUTLINE DRAWING
Maximum Ratings
Parameter
Repetitive Peak Off-State Voltage
Non Repetitive Peak Off-State Voltage
Repetitive Peak Reverse Voltage
Non Repetitive Peak Reverse Voltage
Symbol
VDRM
VDSM
VRRM
VRSM
Approx Net Weight:500g
Grade
PAT/PAH2008
800
900
800
900
Unit
V
V
Parameter
wwAw.vDeatraaSgheeetR4Ue.ccotmified Output Current
RMS On-State Current
Surge On-State Current
I Squared t
Critical Rate of Turned-On Current
Peak Gate Power
Average Gate Power
Peak Gate Current
Peak Gate Voltage
Peak Gate Reverse Voltage
Operating JunctionTemperature Range
Storage Temperature Range
Isoration Voltage
Mounting torque
Case mounting
Terminals
Value per 1 Arm
IO(AV)
IT(RMS)
ITSM
I2t
di/dt
PGM
PG(AV)
IGM
VGM
VRGM
Tjw
Tstg
Viso
Ftor
Conditions
Max Rated
Value
50Hz Half Sine Wave condition
Tc=65°C
200
314
50 Hz Half Sine Wave,1Pulse
Non-Repetitive
4000
2msec to 10msec
8000
VD=2/3VDRM, ITM=2IO, Tj=125°C
IG=300mA, diG/dt=0.2A/µs
100
5
1
2
10
5
-40 to +125
-40 to +125
Base Plate to Terminals, AC1min
2000
M6 Screw
2.5 to 3.5
M8 Screw
9.0 to 10.0
Unit
A
A
A
A2s
A/µs
W
W
A
V
V
°C
°C
V
Nm



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Electrical Thermal Characteristics
Characteristics
Peak Off-State Current
Peak Reverse Current
Peak Forward Voltage
Gate Current to Trigger
Gate Voltage to Trigger
Gate Non-Trigger Voltage
Critical Rate of Rise of Off-State
Voltage
Turn-Off Time
Turn-On Time
Delay Time
Rise Time
Latching Current
Holding Current
Thermal Resistance
Value Per 1Arm
Symbol
Test Conditions
IDM VDM= VDRM, Tj= 125°C
IRM VRM= VRRM, Tj= 125°C
VTM ITM= 600A, Tj=25°C
Tj=-40°C
IGT VD=6V,IT=1A Tj=25°C
Tj=125°C
Tj=-40°C
VGT VD=6V,IT=1A Tj=25°C
Tj=125°C
VGD VD=2/3VDRM Tj=125°C
dv/dt VD=2/3VDRM Tj=125°C
ITM=IO,VD=2/3VDRM
tq dv/dt=20V/µs, VR=100V
-di/dt=20A/µs, Tj=125°C
tgt
td
tr
VD=2/3VDRM Tj=125°C
IG=300mA, diG/dt=0.2A/µs
IL Tj=25°C
IH Tj=25°C
Rth(j-c) Junction to Case
Rth(c-f)
Base Plate to
with Thermal
Heat Sink
Compound
Maximum Value.
Min. Typ. Max.
30
30
1.34
300
150
80
5
3
2
0.25
500
100
6
2
4
100
60
0.23
0.1
Unit
mA
mA
V
mA
V
V
V/µs
µs
µs
µs
µs
mA
°C/W
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PAT/PAH2008 OUTLINE DRAWING (Dimensions in mm)
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PAT
PAH



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PAT2008 datasheet pdf
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PAT2008 pdf
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PAT20016 pdf
PAT2008 THYRISTOR MODULE PAT2008
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PAT2008 pdf

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