PA610ATF Datasheet PDF - UNIKC

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PA610ATF
UNIKC

Part Number PA610ATF
Description N-Channel Enhancement Mode MOSFET
Page 6 Pages


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PA610ATF
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
160mΩ @VGS = 10V
ID
8A
TO-220F
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
8
5.4
32
Avalanche Current
IAS 8
Avalanche Energy
L = 0.1mH
EAS
22
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
25
10
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
Case-to-Heatsink
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
RqJA
RqCS
TYPICAL
0.5
MAXIMUM
5
62.5
UNITS
°C / W
REV 1.1
1 2014/6/16



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PA610ATF
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
100
2.0 3.0 4.0
±250
Zero Gate Voltage Drain Current
On-State Drain Current1
IDSS
ID(ON)
VDS = 80V, VGS = 0V
VDS = 66V, VGS = 0V , TJ = 125 °C
VDS = 10V, VGS = 10V
32
1
10
Drain-Source On-State
Resistance1
RDS(ON)
VGS = 10V, ID = 5.5A
130 160
Forward Transconductance1
gfs
VDS = 50V, ID = 5.5A
2
DYNAMIC
Input Capacitance
Ciss
Output Capacitance
Coss VGS = 0V, VDS = 25V, f = 1MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge2
Qg
Gate-Source Charge2
Qgs VDS = 50V, VGS = 10V, ID = 8A
Gate-Drain Charge2
Qgd
Turn-On Delay Time2
td(on)
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDD = 75V,
ID @ 8A, VGS = 10V, RGS = 25Ω
Fall Time2
tf
560
81
10
22
5.2
7
6.9
23
30
24
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = IS, VGS = 0V
8
1.4
Reverse Recovery Time
trr
80
Reverse Recovery Charge
Qrr
220
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
UNITS
V
nA
mA
A
S
pF
nC
nS
A
V
nS
nC
REV 1.1
2 2014/6/16



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PA610ATF
N-Channel Enhancement Mode MOSFET
REV 1.1
3 2014/6/16



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PA610ATF
N-Channel Enhancement Mode MOSFET
REV 1.1
4 2014/6/16



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UNIKC
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