PA610ATF Datasheet PDF - UNIKC

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PA610ATF
UNIKC

Part Number PA610ATF
Description N-Channel Enhancement Mode MOSFET
Page 6 Pages


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PA610ATF
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
160mΩ @VGS = 10V
ID
8A
TO-220F
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
8
5.4
32
Avalanche Current
IAS 8
Avalanche Energy
L = 0.1mH
EAS
22
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
25
10
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
Case-to-Heatsink
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
RqJA
RqCS
TYPICAL
0.5
MAXIMUM
5
62.5
UNITS
°C / W
REV 1.1
1 2014/6/16

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