PA610AD Datasheet PDF - UNIKC

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PA610AD
UNIKC

Part Number PA610AD
Description N-Channel Enhancement Mode MOSFET
Page 5 Pages


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PA610AD
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
160mΩ @VGS = 10V
ID
12A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
12
7
40
Avalanche Current
IAS 24
Avalanche Energy
L = 0.1mH
EAS
29
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
42
17
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
3
62.5
UNITS
°C / W
Ver 1.2
1 2014/5/23



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PA610AD
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
100
2.0 3.2 4.0
±250
Zero Gate Voltage Drain Current
On-State Drain Current1
IDSS
ID(ON)
VDS = 80V, VGS = 0V
VDS = 66V, VGS = 0V , TJ = 125 °C
VDS = 10V, VGS = 10V
40
1
10
Drain-Source On-State
Resistance1
RDS(ON)
VGS = 10V, ID = 5.5A
145 160
Forward Transconductance1
gfs
VDS = 10V, ID = 5.5A
2
DYNAMIC
Input Capacitance
Ciss
1060
Output Capacitance
Coss VGS = 0V, VDS = 25V, f = 1MHz
124
Reverse Transfer Capacitance
Crss
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Qg
Qgs
Qgd
VDS = 50V, VGS = 10V,
ID = 5.5A
Turn-On Delay Time2
td(on)
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDD = 50V,
ID@ 5.5A, VGS = 10V, RGS = 25Ω
Fall Time2
tf
64
18
5
6
10
40
30
28
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
Forward Voltage1
IS
VSD IF =5.5A, VGS = 0V
12
1.2
Reverse Recovery Time
Reverse Recovery Charge
trr IF = 5.5A, dlF/dt = 100A / mS
Qrr
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
92
280
2Independent of operating temperature.
UNIT
V
nA
mA
A
S
pF
nC
nS
A
V
nS
nC
Ver 1.2
2 2014/5/23



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PA610AD
N-Channel Enhancement Mode MOSFET
Ver 1.2
3 2014/5/23



No Preview Available !

PA610AD
N-Channel Enhancement Mode MOSFET
Ver 1.2
4 2014/5/23



PA610AD datasheet pdf
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PA610AD pdf
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