PA610AD Datasheet PDF - UNIKC

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PA610AD
UNIKC

Part Number PA610AD
Description N-Channel Enhancement Mode MOSFET
Page 5 Pages


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PA610AD
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
160mΩ @VGS = 10V
ID
12A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
12
7
40
Avalanche Current
IAS 24
Avalanche Energy
L = 0.1mH
EAS
29
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
42
17
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
3
62.5
UNITS
°C / W
Ver 1.2
1 2014/5/23

PA610AD datasheet pdf
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PA610AD pdf
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