PA610AD Datasheet PDF - NIKO-SEM

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PA610AD
NIKO-SEM

Part Number PA610AD
Description N-Channel Field Effect Transistor
Page 7 Pages


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NIKO-SEM
N-Channel Enhancement Mode
Field Effect Transistor
PA610AD
TO-252
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100 160mΩ
ID
12A
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
L = 0.1mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
IAs
EAS
PD
Tj, Tstg
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RθJC
Junction-to-Ambient
RθJA
1Pulse width limited by maximum junction temperature.
TYPICAL
1. GATE
2. DRAIN
3. SOURCE
LIMITS
±20
12
7
40
24
29
42
17
-55 to 150
UNITS
V
A
mJ
W
°C
MAXIMUM
3
62.5
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current1
Drain-Source On-State
Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(ON)
RDS(ON)
gfs
STATIC
VGS = 0V, ID = 250µA
VDS = VGS, ID = 250µA
VDS = 0V, VGS = ±20V
VDS = 80V, VGS = 0V
VDS = 66V, VGS = 0V, TJ = 125 °C
VDS = 10V, VGS = 10V
VGS = 10V, ID = 5.5A
VDS = 10V, ID = 5.5A
LIMITS
UNIT
MIN TYP MAX
100
2.0 3.2
4.0
V
±250 nA
1
µA
10
40 A
145 160 mΩ
2S
REV 1.0
Jun-03-2010
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NIKO-SEM
N-Channel Enhancement Mode
Field Effect Transistor
PA610AD
TO-252
Halogen-Free & Lead-Free
DYNAMIC
Input Capacitance
Ciss
1060
Output Capacitance
Coss VGS = 0V, VDS = 25V, f = 1MHz
124
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS =50V, VGS = 10V,
ID = 5.5A
VDD = 50V,
ID 5.5A, VGS = 10V, RGS = 25Ω
64
18
5
6
10
40
30
28
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
Forward Voltage1
IS
VSD IF = 5.5A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
IF = 5.5A, dlF/dt = 100A / µS
Qrr
1Pulse test : Pulse Width 300 µsec, Duty Cycle 2.
2Independent of operating temperature.
92
280
12
1.2
pF
nC
nS
A
V
nS
nC
REMARK: THE PRODUCT MARKED WITH “PA610AD”, DATE CODE or LOT #
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NIKO-SEM
N-Channel Enhancement Mode
Field Effect Transistor
PA610AD
TO-252
Halogen-Free & Lead-Free
10 Output Characteristics
Transfer Characteristics
10
8
VGS=10V
VGS=9 V
6 VGS=8 V
VGS=7 V
4
VGS =6V
2 VGS =5V
VGS=4.5V
0
0 1 23 4
VDS, Drain-To-Source Voltage(V)
On-Resistance VS Temperature
RDS(ON) 2 .0
5
RDS(ON) 1 .8
RDS(ON) 1 .6
RDS(ON)
RDS(ON)
1 .4
1 .2
RDS(ON) 1 .0
RDS(ON) 0 .8
RDS(ON)
RDS(ON)
0 .6
0 .4
-50 -25
0
V GS=10V
ID=5.5A
25 50 75 100 125 150
TJ , Junction Temperature(˚C)
Gate charge Characteristics
10 Characteristics
8
ID=5.5A
V DS=50V
6
4
2
0
0 4 8 12 16 20
Qg , Total Gate Charge(nC)
8
6
4
125
25
2 -20
0
23 45 6
VGS, Gate-To-Source Voltage(V)
Capacitance Characteristic
1.50E+03
7
1.20E+03
9.00E+02
Cis s
6.00E+02
3.00E+02
0.00E+00
0
Coss
Cr s s
5 10 15 20 25
VDS, Drain-To-Source Voltage(V)
30
Source-Drain Diode Forward Voltage
1.0E+03
1.0E+02
1.0E+01
1.0E+00
1.0E-01
TJ =150° C
TJ =25° C
1.0E-02
1.0E-03
1.0E-04
0.1
0.3 0.5 0.7 0.9 1.1
VSD, Source-To-Drain Voltage(V)
1.3
REV 1.0
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NIKO-SEM
N-Channel Enhancement Mode
Field Effect Transistor
PA610AD
TO-252
Halogen-Free & Lead-Free
Safe Operating Area
100
Operation in This
Area is Lim ited
by RDS(ON)
10
100us
Single Pulse Maximum Power Dissipation
500
400
SINGLE PULSE
RθJC = 3˚ C/W
TC=25˚ C
300
1
NOTE :
1.VGS= 10V
2.TC=25˚ C
3.RθJC = 3˚ C/W
4.Single Pulse
1m s
10m s
100m s
DC
0.1
1 10 100
VDS, Drain-To-Source Voltage(V)
200
100
0
1000
0.0001
0.001
0.01
0.1
1
Single Pulse Time(s)
10
1.00E+01
Transient Thermal Response Curve
1.00E+00
Duty Cycle =0.5
1.00E-01
0.2
0.1
0.05
0.02
0.01
1.00E-02
1.E-05
single Pluse
1.E-04
1.E-03
1.E-02
1.E-01
T1 , Square Wave Pulse Duration[sec]
Note
1.Duty cycle, D= t1 / t2
2.RthJC = 3 oC/W
3.TJ-TC = P*RthJC(t)
4.RthJC(t) = r(t)*RthJC
1.E+00
1.E+01
REV 1.0
Jun-03-2010
4



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