PA410BTF Datasheet PDF - NIKO-SEM

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PA410BTF
NIKO-SEM

Part Number PA410BTF
Description N-Channel Field Effect Transistor
Page 4 Pages


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NIKO-SEM
N-Channel Enhancement Mode
PA410BTF
Field Effect Transistor
TO-220F
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
140mΩ
ID
10A
D
G
1. GATE
2. DRAIN
3. SOURCE
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
Avalanche Current
Avalanche Energy
Power Dissipation
Junction & Storage Temperature Range
TC = 25 °C
TC = 100 °C
L = 0.1mH
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
IAS
EAS
PD
TJ, Tstg
LIMITS
100
±20
10
6
30
9.8
4.8
29
11
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RJC
Junction-to-Ambient
RJA
1Pulse width limited by maximum junction temperature.
TYPICAL
MAXIMUM
4.2
62.5
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State
Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(ON)
gfs
STATIC
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
VDS = 0V, VGS = ±20V
VDS = 80V , VGS = 0V
VDS = 80V, VGS = 0V, TJ = 125 °C
VGS = 4.5V, ID = 5A
VGS = 10V , ID = 5A
VDS = 10V, ID = 5A
LIMITS UNIT
MIN TYP MAX
100
1.3 1.8 2.3
V
±100 nA
1
10 A
105 170
mΩ
95 140
13 S
REV 1.0
1
D-37-2



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NIKO-SEM
N-Channel Enhancement Mode
PA410BTF
Field Effect Transistor
TO-220F
Halogen-Free & Lead-Free
DYNAMIC
Input Capacitance
Ciss
333
Output Capacitance
Coss VGS = 0V, VDS = 25V, f = 1MHz
59
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 10V
VDS = 50V, ID = 5A
VDS = 50V
ID 5A, VGS = 10V, RGEN =6Ω
26
9
1.1
4
22
60
30
40
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
Forward Voltage1
IS
VSD IF = 5A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
IF = 5A, dlF/dt = 100A / S
Qrr
1Pulse test : Pulse Width 300 sec, Duty Cycle 2.
2Independent of operating temperature.
29
33
10
1.1
pF
nC
nS
A
V
nS
nC
REV 1.0
2
D-37-2



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NIKO-SEM
N-Channel Enhancement Mode
PA410BTF
Field Effect Transistor
TO-220F
Halogen-Free & Lead-Free
Output Characteristics
15
VGS=10V
VGS=9V
VGS=8V
12
VGS=7V
VGS=6V
VGS=5V
VGS=4.5V
VGS=3.5V
9
Transfer Characteristics
15
12
9
6
VGS=3V
3
0
012345
VDS, Drain-To-Source Voltage(V)
On-Resistance VS Temperature
2.4
2.0
1.6
1.2
0.8 VGS=10V
ID=5A
0.4
-50 -25 0 25 50 75 100 125 150
TJ , Junction Temperature(˚C)
Gate charge Characteristics
10 Characteristics
VDS=50V
8 ID=5A
6
6
25
3
125
-20
0
012345
VGS, Gate-To-Source Voltage(V)
Capacitance Characteristic
450
400
350
CISS
300
250
200
150
100
50
0
0
COSS
CRSS
5 10 15 20 25 30
VDS, Drain-To-Source Voltage(V)
Source-Drain Diode Forward Voltage
100
10
4
1
150
25
2
0
0 2 4 6 8 10
Qg , Total Gate Charge(nC)
0.1
0.0
0.2 0.4 0.6 0.8 1.0 1.2
VSD, Source-To-Drain Voltage(V)
1.4
REV 1.0
3
D-37-2



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NIKO-SEM
N-Channel Enhancement Mode
PA410BTF
Field Effect Transistor
TO-220F
Halogen-Free & Lead-Free
Safe Operating Area
100
Operation in This Area is
Limited by RDS(ON)
10
Single Pulse Maximum Power Dissipation
150
Single Pulse
120 RθJC = 4.2 ˚C/W
TC=25˚C
90
1
0.1
1
NOTE :
1.VGS= 10V
2.TC=25˚C
3.RθJC = 4.2 ˚C/W
4.Single Pulse
1ms
10ms
100ms
DC
10 100
VDS, Drain-To-Source Voltage(V)
1000
60
30
0
0.001
0.01
0.1
1
10
Single Pulse Time(s)
Transient Thermal Response Curve
10
Duty cycle=0.5
0.2
0.1
0.05
0.02
0.01
1
100
0.1
single pulse
Notes
1.Duty cycle, D= t1 / t2
2.RthJC = 4.2 /W
3.TJ-TC = P*RthJC(t)
4.RthJC(t) = r(t)*RthJC
0.01
0.0001
0.001
0.01
0.1
1
10 100
T1 , Square Wave Pulse Duration[sec]
REV 1.0
4
D-37-2



PA410BTF datasheet pdf
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PA410BTF pdf
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