PA410BT Datasheet PDF - NIKO-SEM

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PA410BT
NIKO-SEM

Part Number PA410BT
Description N-Channel Field Effect Transistor
Page 4 Pages


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NIKO-SEM
N-Channel Enhancement Mode
PA410BT
Field Effect Transistor
TO-220
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
140mΩ
ID
11A
D
G
S
1. GATE
2. DRAIN
3. SOURCE
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
Avalanche Current
Avalanche Energy
Power Dissipation
Junction & Storage Temperature Range
TC = 25 °C
TC = 100 °C
L = 0.1mH
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
IAS
EAS
PD
TJ, Tstg
LIMITS
100
±20
11
6.8
30
9.7
4.7
38
15
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RJC
Junction-to-Ambient
RJA
1Pulse width limited by maximum junction temperature.
TYPICAL
MAXIMUM
3.3
62.5
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State
Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(ON)
gfs
STATIC
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
VDS = 0V, VGS = ±20V
VDS = 80V , VGS = 0V
VDS = 80V, VGS = 0V, TJ = 125 °C
VGS = 4.5V, ID = 5A
VGS = 10V , ID = 5A
VDS = 10V, ID = 5A
LIMITS UNIT
MIN TYP MAX
100
1.3 1.9 2.3
V
±100 nA
1
10 A
102 170
mΩ
91 140
13 S
REV 1.0
1
D-31-4



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NIKO-SEM
N-Channel Enhancement Mode
PA410BT
Field Effect Transistor
TO-220
Halogen-Free & Lead-Free
DYNAMIC
Input Capacitance
Ciss
335
Output Capacitance
Coss VGS = 0V, VDS = 25V, f = 1MHz
60
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 10V
VDS = 50V, ID = 5A
VDS = 50V
ID 5A, VGS = 10V, RGEN =6Ω
26
8.8
1.6
3.8
22
60
30
40
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
Forward Voltage1
IS
VSD IF = 5A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
IF = 5A, dlF/dt = 100A / S
Qrr
1Pulse test : Pulse Width 300 sec, Duty Cycle 2.
2Independent of operating temperature.
28
31
11
1.1
pF
nC
nS
A
V
nS
nC
REV 1.0
2
D-31-4



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NIKO-SEM
N-Channel Enhancement Mode
PA410BT
Field Effect Transistor
TO-220
Halogen-Free & Lead-Free
Output Characteristics
15
VGS=10V
VGS=9V
VGS=8V
12
VGS=7V
VGS=6V
VGS=5V
VGS=4.5V
VGS=3.5V
9
Transfer Characteristics
15
12
9
6
VGS=3V
3
0
01234
VDS, Drain-To-Source Voltage(V)
On-Resistance VS Temperature
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
VGS=10V
0.6 ID=5A
0.4
-50
-25 0 25 50 75 100
TJ , Junction Temperature(˚C)
125
Gate charge Characteristics
10 Characteristics
VDS=50V
ID=5A
8
5
150
6
6
125
3
25
-20
0
01234
VGS, Gate-To-Source Voltage(V)
Capacitance Characteristic
450
5
400
350
CISS
300
250
200
150
100
50
0
0
COSS
CRSS
5 10 15 20 25 30
VDS, Drain-To-Source Voltage(V)
Source-Drain Diode Forward Voltage
100
10
4
150
25
1
2
0
02468
Qg , Total Gate Charge(nC)
10
0.1
0.0
0.2 0.4 0.6 0.8 1.0 1.2
VSD, Source-To-Drain Voltage(V)
1.4
REV 1.0
3
D-31-4



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NIKO-SEM
N-Channel Enhancement Mode
PA410BT
Field Effect Transistor
TO-220
Halogen-Free & Lead-Free
Safe Operating Area
100
Operation in This Area
is Limited by RDS(ON)
10
Single Pulse Maximum Power Dissipation
120
Single Pulse
100 RθJC = 3.3 ˚C/W
TC=25˚C
80
60
1
NOTE :
1.VGS= 10V
2.TC=25˚C
3.RθJC = 3.3 ˚C/W
4.Single Pulse
1ms
10ms
100ms
DC
40
20
0.1
1
10
VDS, Drain-To-Source Voltage(V)
100
0
0.001
0.01
0.1
1
10
Single Pulse Time(s)
Transient Thermal Response Curve
100
1
Duty cycle=0.5
0.2
0.1
0.05
0.02
0.01
single pulse
0.1
0.0001
0.001
0.01
0.1
1
T1 , Square Wave Pulse Duration[sec]
Notes
1.Duty cycle, D= t1 / t2
2.RthJC = 3.3 /W
3.TJ-TC = P*RthJC(t)
4.RthJC(t) = r(t)*RthJC
10 100
REV 1.0
4
D-31-4



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