PA110BDA Datasheet PDF - UNIKC

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PA110BDA
UNIKC

Part Number PA110BDA
Description N-Channel Enhancement Mode MOSFET
Page 8 Pages


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PA110BDA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
105mΩ @VGS = 10V
ID
15A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 100
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
15
9.2
20
Avalanche Current
IAS 5.4
Avalanche Energy
L =1mH
EAS 14.8
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
50
20
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
Junction-to-Case
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJA
RqJC
TYPICAL
MAXIMUM
62.5
2.5
UNITS
°C / W
REV 1.2 1 2015/7/9

PA110BDA datasheet pdf
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