PA110BDA Datasheet PDF - UNIKC

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PA110BDA
UNIKC

Part Number PA110BDA
Description N-Channel Enhancement Mode MOSFET
Page 8 Pages


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PA110BDA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
105mΩ @VGS = 10V
ID
15A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 100
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
15
9.2
20
Avalanche Current
IAS 5.4
Avalanche Energy
L =1mH
EAS 14.8
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
50
20
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
Junction-to-Case
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJA
RqJC
TYPICAL
MAXIMUM
62.5
2.5
UNITS
°C / W
REV 1.2 1 2015/7/9



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PA110BDA
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V(BR)DSS
VGS(th)
IGSS
IDSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
100
1 1.8
3
V
VDS = 0V, VGS = ±20V
±100 nA
VDS = 80V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 125 °C
1
mA
10
Drain-Source On-State
Resistance1
RDS(ON)
VGS = 4.5V, ID = 6A
VGS =10V, ID = 6A
81 120
77 105
Forward Transconductance1
gfs
VDS = 10V, ID = 6A
20
DYNAMIC
Input Capacitance
Ciss
592
Output Capacitance
Coss VGS = 0V, VDS = 25V, f = 1MHz
52
Reverse Transfer Capacitance
Crss
30
Gate Resistance
Rg VGS = 0V, VDS = 0V, f = 1MHz
1.3
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Qg(VGS=10V)
Qg(VGS=4.5V)
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 50V, ID = 6A
VDS = 50V,
ID @ 6A, VGS = 10V, RGEN = 6Ω
13.9
8
2
4.7
18
15
51
15
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = 6A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 6A, dl/dt = 100A / μS
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
25
25
2Independent of operating temperature.
15
1.4
S
pF
Ω
nC
nS
A
V
nS
nC
REV 1.2 2 2015/7/9



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PA110BDA
N-Channel Enhancement Mode MOSFET
REV 1.2 3 2015/7/9



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PA110BDA
N-Channel Enhancement Mode MOSFET
REV 1.2 4 2015/7/9



PA110BDA datasheet pdf
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PA110BDA pdf
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