PA110BD Datasheet PDF - UNIKC

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PA110BD
UNIKC

Part Number PA110BD
Description N-Channel Enhancement Mode MOSFET
Page 5 Pages


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PA110BD
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
110mΩ @VGS = 10V
ID
15A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 100
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
15
10
60
Avalanche Current
IAS 24
Avalanche Energy
L = 0.1mH
EAS
30
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
50
20
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
2Limited by package.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
2.5
50
UNITS
°C / W
Ver 1.1
1 2013-3-26



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PA110BD
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage V(BR)DSS
VGS = 0V, ID = 250mA
100
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250mA
123
Gate-Body Leakage
IGSS VDS = 0V, VGS = ±20V
±100
Zero Gate Voltage Drain Current
IDSS
VDS = 80V, VGS = 0V
VDS = 80V, VGS = 0V , TJ = 125 °C
1
10
On-State Drain Current1
ID(ON)
VDS = 10V, VGS = 10V
60
Drain-Source On-State
Resistance1
RDS(ON)
VGS = 4.5V, ID = 6A
VGS = 10V, ID = 12A
92 120
87 110
Forward Transconductance1
gfs
VDS = 10V, ID = 12A
40
DYNAMIC
Input Capacitance
Ciss
1400
Output Capacitance
Coss VGS = 0V, VDS = 25V, f = 1MHz
103
Reverse Transfer Capacitance
Crss
65
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Qg
Qgs
Qgd
VDS = 50V, VGS = 10V,
ID = 12A
29
4
9
Turn-On Delay Time2
td(on)
8
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDD = 50V,
ID@ 12A, VGS = 10V, RGEN = 6Ω
170
32
Fall Time2
tf
75
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF =12A, VGS = 0V
15
1.4
Reverse Recovery Time
Reverse Recovery Charge
trr IF = 12A, dlF/dt = 100A / mS
Qrr
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
26
17
UNIT
V
nA
mA
A
S
pF
nC
nS
A
V
nS
nC
Ver 1.1
2 2013-3-26



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PA110BD
N-Channel Enhancement Mode MOSFET
Ver 1.1
3 2013-3-26



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PA110BD
N-Channel Enhancement Mode MOSFET
Ver 1.1
4 2013-3-26



PA110BD datasheet pdf
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PA110BD pdf
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