P8315BD Datasheet PDF - UNIKC

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P8315BD
UNIKC

Part Number P8315BD
Description N-Channel Enhancement Mode MOSFET
Page 5 Pages


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P8315BD
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
150V
83mΩ @VGS = 10V
ID
20A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 150
Gate-Source Voltage
VGS ±30
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
20
12
50
Avalanche Current
IAS 20
Avalanche Energy
L = 1mH EAS 207
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
73
29
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
Junction-to-Case
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJA
RqJC
TYPICAL
MAXIMUM
50
1.7
UNITS
°C / W
REV 1.0
1 2014/10/22

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