P8315BD Datasheet PDF - UNIKC

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P8315BD
UNIKC

Part Number P8315BD
Description N-Channel Enhancement Mode MOSFET
Page 5 Pages


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P8315BD
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
150V
83mΩ @VGS = 10V
ID
20A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 150
Gate-Source Voltage
VGS ±30
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
20
12
50
Avalanche Current
IAS 20
Avalanche Energy
L = 1mH EAS 207
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
73
29
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
Junction-to-Case
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJA
RqJC
TYPICAL
MAXIMUM
50
1.7
UNITS
°C / W
REV 1.0
1 2014/10/22



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P8315BD
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±30V
VDS = 120V, VGS = 0V
VDS = 100V, VGS = 0V, TJ = 125 °C
150
1
V
23
±100 nA
1
mA
10
Drain-Source On-State
Resistance1
RDS(ON)
VGS = 4.5V, ID = 10A
VGS = 10V, ID = 10A
78 100
68 83
Forward Transconductance1
gfs
VDS = 5V, ID = 10A
20 S
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = 25V, f = 1MHz
VGS = 0V, VDS = 0V, f = 1MHz
VGS = 10 V,
VDS = 75V, ID = 10A
VDS = 75V,
ID @ 10A, VGS = 10V, RGEN= 6Ω
1133
208
58
1.8
41
4.1
19
14
49
47
39
pF
Ω
nC
nS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = 10A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 10A, dlF/dt = 100A / mS
101
394
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
16
1.6
A
V
nS
nC
REV 1.0
2 2014/10/22



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P8315BD
N-Channel Enhancement Mode MOSFET
REV 1.0
3 2014/10/22



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P8315BD
N-Channel Enhancement Mode MOSFET
REV 1.0
4 2014/10/22



P8315BD datasheet pdf
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P8315BD pdf
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P8315BD N-Channel Enhancement Mode MOSFET P8315BD
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