P8010BTF Datasheet PDF - NIKO-SEM

www.Datasheet-PDF.com

P8010BTF
NIKO-SEM

Part Number P8010BTF
Description N-Channel Field Effect Transistor
Page 4 Pages


P8010BTF datasheet pdf
Download PDF
P8010BTF pdf
View PDF for Mobile


No Preview Available !

NIKO-SEM
N-Channel Enhancement Mode
P8010BTF
Field Effect Transistor
TO-220F
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
85mΩ
ID
11A
D
G
1. GATE
2. DRAIN
3. SOURCE
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
Avalanche Current
Avalanche Energy
Power Dissipation
Junction & Storage Temperature Range
TC = 25 °C
TC = 100 °C
L = 0.1mH
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
IAS
EAS
PD
TJ, Tstg
LIMITS
100
±20
11
7
35
14
10
24
9.6
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RJC
Junction-to-Ambient
RJA
1Pulse width limited by maximum junction temperature.
TYPICAL
MAXIMUM
5.2
62.5
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State
Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(ON)
gfs
STATIC
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
VDS = 0V, VGS = ±20V
VDS = 80V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 125 °C
VGS = 4.5V, ID = 10A
VGS = 10V , ID = 11A
VDS = 10V, ID = 11A
LIMITS UNIT
MIN TYP MAX
100
1.3 1.8 2.3
V
±100 nA
1
10 A
61 95
mΩ
59 85
28 S
REV1.1
1
D-51-5



No Preview Available !

NIKO-SEM
N-Channel Enhancement Mode
P8010BTF
Field Effect Transistor
TO-220F
Halogen-Free & Lead-Free
DYNAMIC
Input Capacitance
Ciss
550
Output Capacitance
Coss VGS = 0V, VDS = 25V, f = 1MHz
86
Reverse Transfer Capacitance
Crss
36
Gate Resistance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = 0V, f = 1MHz
VGS = 10 V
VDS = 50V, ID = 11A
VDS = 40V
ID 11A, VGS = 10V, RGEN =6Ω
1.1
12.9
2
4.6
11
48
80
73
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
Forward Voltage1
IS
VSD IF = 11A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
IF = 11A, dlF/dt = 100A / S
Qrr
1Pulse test : Pulse Width 300 sec, Duty Cycle 2.
2Independent of operating temperature.
33
47
11
1.1
pF
Ω
nC
nS
A
V
nS
nC
REV1.1
2
D-51-5



No Preview Available !

NIKO-SEM
N-Channel Enhancement Mode
P8010BTF
Field Effect Transistor
TO-220F
Halogen-Free & Lead-Free
Output Characteristics
30
VGS=10V
VGS=9V
VGS=8V
24 VGS=7V
VGS=6V
VGS=5V
VGS=4.5V
VGS=3.5V
VGS=4V
18
Transfer Characteristics
30
24
18
12
VGS=3V
6
0
01234
VDS, Drain-To-Source Voltage(V)
5
On-Resistance VS Temperature
2.3
2.1
1.9
1.7
1.5
1.3
1.1
0.9
0.7
VGS=10V
0.5 ID=11A
0.3
-50
-25 0
25 50 75 100
TJ , Junction Temperature(˚C)
125
150
Gate charge Characteristics
10 Characteristics
VDS=50V
ID=11A
8
6
12
125
-20
6
25
0
012345
VGS, Gate-To-Source Voltage(V)
Capacitance Characteristic
700
600
CISS
500
400
300
200
100
0
0
COSS
CRSS
5 10 15 20 25 30
VDS, Drain-To-Source Voltage(V)
Source-Drain Diode Forward Voltage
100
10
4 15025
1
2
0
0 3 6 9 12
Qg , Total Gate Charge(nC)
15
0.1
0.0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD, Source-To-Drain Voltage(V)
REV1.1
3
D-51-5



No Preview Available !

NIKO-SEM
N-Channel Enhancement Mode
P8010BTF
Field Effect Transistor
TO-220F
Halogen-Free & Lead-Free
Safe Operating Area
100
Operation in This Area
is Limited by RDS(ON)
10
100uS
1
NOTE :
1.VGS= 10V
2.TC=25˚C
3.RθJC = 5.2˚C/W
4.Single Pulse
1ms
10ms
100ms
DC
0.1
1
10 100
VDS, Drain-To-Source Voltage(V)
Single Pulse Maximum Power Dissipation
350
300 Single Pulse
RθJC = 5.2˚C/W
TC=25˚C
250
200
150
100
50
0
0.0001
0.001
0.01
0.1
1
10
Single Pulse Time(s)
100
Transient Thermal Response Curve
1
Duty cycle=0.5
0.2
0.1
0.05
0.02
0.1 0.01
single pulse
0.01
0.0001
0.001
Notes
0.01
0.1
1
T1 , Square Wave Pulse Duration[sec]
1.Duty cycle, D= t1 / t2
2.RthJC = 5.2 /W
3.TJ-TC = P*RthJC(t)
4.RthJC(t) = r(t)*RthJC
10 100
REV1.1
4
D-51-5



P8010BTF datasheet pdf
Download PDF
P8010BTF pdf
View PDF for Mobile


Related : Start with P8010BT Part Numbers by
P8010BT N-Channel Field Effect Transistor P8010BT
NIKO-SEM
P8010BT pdf
P8010BT N-Channel Enhancement Mode MOSFET P8010BT
UNIKC
P8010BT pdf
P8010BTF N-Channel Field Effect Transistor P8010BTF
NIKO-SEM
P8010BTF pdf
P8010BTF N-Channel Enhancement Mode MOSFET P8010BTF
UNIKC
P8010BTF pdf

Index :   0   1   2   3   4   5   6   7   8   9   A   B   C   D   E   F   G   H   I   J   K   L   M   N   O   P   Q   R   S   T   U   V   W   X   Y   Z   

This is a individually operated, non profit site. If this site is good enough to show, please introduce this site to others.
Since 2010   ::   HOME   ::   Contact