P8010BT Datasheet PDF - NIKO-SEM

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P8010BT
NIKO-SEM

Part Number P8010BT
Description N-Channel Field Effect Transistor
Page 4 Pages


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NIKO-SEM
N-Channel Enhancement Mode
P8010BT
Field Effect Transistor
TO-220
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
85mΩ
ID
17A
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
Avalanche Current
Avalanche Energy2
Power Dissipation
Junction & Storage Temperature Range
TC = 25 °C
TC = 100 °C
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
IAS
EAS
PD
TJ, Tstg
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RJC
Junction-to-Case
1Pulse width limited by maximum junction temperature.
2Starting Tj =25 °C,L=0.1mH,VDD=50V
TYPICAL
1. GATE
2. DRAIN
3. SOURCE
LIMITS
100
±20
17
10
35
13
8.5
54
21
-55 to 150
UNITS
V
V
A
mJ
W
°C
MAXIMUM
2.3
62.5
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State
Resistance1
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(ON)
RDS(ON)
STATIC
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
VDS = 0V, VGS = ±20V
VDS = 80V, VGS = 0V
VDS=80V, VGS=0V, TJ=125 °C
VGS = 4.5V, ID = 10A
VGS = 10V, ID = 15A
LIMITS
MIN TYP MAX
UNIT
100
1.3 1.8 2.3
V
±100 nA
1
A
10
63 95 mΩ
61 85 mΩ
REV1.0
1
D-51-3



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NIKO-SEM
N-Channel Enhancement Mode
P8010BT
Field Effect Transistor
TO-220
Halogen-Free & Lead-Free
Forward Transconductance1
gfs VDS = 10V, ID = 15A
DYNAMIC
26
Input Capacitance
Output Capacitance
Ciss
Coss VGS = 0V, VDS = 25V, f = 1MHz
538
86
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 50V, ID = 15A
VGS = 10V
VDD = 50V
ID 15A, VGS = 10V, RGS = 6Ω
35
12.7
1.9
4.5
11
53
80
75
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = 15A, VGS = 0V
17
1.1
Reverse Recovery Time
Reverse Recovery Charge
trr
IF = 15A, dlF/dt = 100A / S
Qrr
1Pulse test : Pulse Width 300 sec, Duty Cycle 2.
2Independent of operating temperature.
33
47
S
pF
nC
nS
A
V
nS
nC
REV1.0
2
D-51-3



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NIKO-SEM
N-Channel Enhancement Mode
P8010BT
Field Effect Transistor
TO-220
Halogen-Free & Lead-Free
Output Characteristics
30
VGS=10V
VGS=9V
VGS=8V
24 VGS=7V
VGS=6V
VGS=5V
VGS=4.5V
VGS=3.5V
18
Transfer Characteristics
20
16
12
12
VGS=3V
6
0
012345
VDS, Drain-To-Source Voltage(V)
6
On-Resistance VS Temperature
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8 VGS=10V
ID=15A
0.6
0.4
-50
-25 0 25 50 75 100 125
TJ , Junction Temperature(˚C)
150
Gate charge Characteristics
10 Characteristics
VDS=50V
ID=15A
8
6
4
2
8
25
4 125
-20
0
01234
VGS, Gate-To-Source Voltage(V)
Capacitance Characteristic
700
5
600
CISS
500
400
300
200
100
0
0
COSS
CRSS
5 10 15 20 25 30
VDS, Drain-To-Source Voltage(V)
Source-Drain Diode Forward Voltage
100
10
150
1
25
0
0 3 6 9 12 15
Qg , Total Gate Charge(nC)
0.1
0.0
0.2 0.4 0.6 0.8 1.0 1.2
VSD, Source-To-Drain Voltage(V)
1.4
REV1.0
3
D-51-3



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NIKO-SEM
N-Channel Enhancement Mode
P8010BT
Field Effect Transistor
TO-220
Halogen-Free & Lead-Free
Safe Operating Area
100
Operation in This
Area is Limited by
RDS(ON)
10
1
0.1
0.1
NOTE :
1.VGS= 10V
2.TC=25˚C
3.RθJC = 2.3 ˚C/W
4.Single Pulse
1ms
10ms
100ms
DC
1 10 100
VDS, Drain-To-Source Voltage(V)
1000
Single Pulse Maximum Power Dissipation
250
Single Pulse
200 RθJC = 2.3 ˚C/W
TC=25˚C
150
100
50
0
0.001
0.01
0.1
1
10
Single Pulse Time(s)
100
Transient Thermal Response Curve
10
Duty cycle=0.5
0.2
0.1
0.05
0.02
0.01
1
0.1 single pulse
0.01
0.0001
0.001
Notes
1.Duty cycle, D= t1 / t2
2.RthJC = 2.3 /W
3.TJ-TC = P*RthJC(t)
4.RthJC(t) = r(t)*RthJC
0.01
0.1
1
T1 , Square Wave Pulse Duration[sec]
10
100
REV1.0
4
D-51-3



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