P8010BIS Datasheet PDF - UNIKC


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P8010BIS
UNIKC

Part Number P8010BIS
Description N-Channel Enhancement Mode MOSFET
Page 5 Pages

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P8010BIS
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
85mΩ @VGS = 10V
ID
15A
TO-251(IS)
1.GATE
2.DRAIN
3.SOURCE
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 100
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
15
9
35
Avalanche Current
IAS 12
Avalanche Energy
L = 0.1mH
EAS
7.2
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
46
18
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
TYPICAL MAXIMUM UNITS
2.7 °C / W
REV 1.0
1 2015/3/30



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P8010BIS
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
100
1.3 1.8 2.3
±100
Zero Gate Voltage Drain Current
On-State Drain Current1
IDSS
ID(ON)
VDS = 80V, VGS = 0V
VDS = 80V, VGS = 0V , TJ = 125 °C
VDS = 5V, VGS = 10V
35
1
10
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 4.5V, ID = 10A
VGS = 10V, ID = 15A
VDS = 5V, ID = 15A
67 95
61 85
25
DYNAMIC
Input Capacitance
Ciss
527
Output Capacitance
Coss VGS = 0V, VDS = 25V, f = 1MHz
68
Reverse Transfer Capacitance
Crss
37
Gate Resistance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = 0V, f = 1MHz
VGS = 10V,
VDS = 0.5V(BR)DSS, ID = 15A
VDS = 40V, ID @ 15A,
VGS = 10V, RGEN =6Ω
1.5
18.5
2.7
5.1
11
48
80
73
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = 15A, VGS = 0V
15
1.1
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 15A, dlF/dt = 100A / mS
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
33
35
2Independent of operating temperature.
UNITS
V
nA
mA
A
S
pF
Ω
nC
nS
A
V
nS
nC
REV 1.0
2 2015/3/30



No Preview Available !

P8010BIS
N-Channel Enhancement Mode MOSFET
REV 1.0
3 2015/3/30



No Preview Available !

P8010BIS
N-Channel Enhancement Mode MOSFET
REV 1.0
4 2015/3/30




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