P8010BD Datasheet PDF - UNIKC

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P8010BD
UNIKC

Part Number P8010BD
Description N-Channel Enhancement Mode MOSFET
Page 5 Pages


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P8010BD
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
85mΩ @VGS = 10V
ID
15A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 100
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
Avalanche Current
TC = 25 °C
TC = 100 °C
VGS
ID
IDM
IAS
±20
15
9
35
12
Avalanche Energy
L =0.1mH
EAS
7.2
MOSFET dV/dt Ruggedness
Peak Diode Recovery dV/dt2
Power Dissipation
Junction & Storage Temperature Range
TC = 25 °C
TC = 100 °C
dV/dt
PD
TJ, Tstg
16.2
4.1
46
18
-55 to 150
UNITS
V
V
A
mJ
V/nS
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
1Pulse width limited by maximum junction temperature.
2ID=15A,di/dt=100A/uS,VDD<BVdss,Starting Tj=25
SYMBOL
RqJC
TYPICAL
MAXIMUM UNITS
2.7 °C / W
REV 1.2
1 2014/5/26

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