P8010BD Datasheet PDF - UNIKC

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P8010BD
UNIKC

Part Number P8010BD
Description N-Channel Enhancement Mode MOSFET
Page 5 Pages


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P8010BD
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
85mΩ @VGS = 10V
ID
15A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 100
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
Avalanche Current
TC = 25 °C
TC = 100 °C
VGS
ID
IDM
IAS
±20
15
9
35
12
Avalanche Energy
L =0.1mH
EAS
7.2
MOSFET dV/dt Ruggedness
Peak Diode Recovery dV/dt2
Power Dissipation
Junction & Storage Temperature Range
TC = 25 °C
TC = 100 °C
dV/dt
PD
TJ, Tstg
16.2
4.1
46
18
-55 to 150
UNITS
V
V
A
mJ
V/nS
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
1Pulse width limited by maximum junction temperature.
2ID=15A,di/dt=100A/uS,VDD<BVdss,Starting Tj=25
SYMBOL
RqJC
TYPICAL
MAXIMUM UNITS
2.7 °C / W
REV 1.2
1 2014/5/26



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P8010BD
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current1
Drain-Source On-State
Resistance1
Forward Transconductance1
ID(ON)
RDS(ON)
gfs
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
VDS = 80V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 125 °C
VDS = 5V, VGS = 10V
VGS = 4.5V, ID = 10A
VGS = 10V , ID = 15A
VDS = 5V, ID = 15A
100
1.3 1.8 2.3
V
±100 nA
1
mA
10
35 A
67 95
61 85
25 S
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = 25V, f = 1MHz
VGS = 0V, VDS = 0V, f = 1MHz
VGS = 10 V,
VDS = 0.5V(BR)DSS, ID = 15A
VDS = 40V,
ID @ 15A, VGS = 10V, RGEN = 6Ω
527
68
37
1.5
18.5
2.7
5.1
11
48
80
73
pF
Ω
nC
nS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
15 A
Forward Voltage1
VSD IF = 15A, VGS = 0V
1.1 V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 15A, dlF/dt = 100A / μS
33 nS
35 nC
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
REV 1.2
2 2014/5/26



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P8010BD
N-Channel Enhancement Mode MOSFET
REV 1.2
3 2014/5/26



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P8010BD
N-Channel Enhancement Mode MOSFET
REV 1.2
4 2014/5/26



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P8010BD pdf
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