P8010BD Datasheet PDF - NIKO-SEM

www.Datasheet-PDF.com

P8010BD
NIKO-SEM

Part Number P8010BD
Description N-Channel Field Effect Transistor
Page 4 Pages


P8010BD datasheet pdf
Download PDF
P8010BD pdf
View PDF for Mobile

No Preview Available !

NIKO-SEM
N-Channel Enhancement Mode
Field Effect Transistor
P8010BD
TO-252
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
85mΩ
ID
15A
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
Avalanche Current
Avalanche Energy
MOSFET dV/dt Ruggedness
Peak Diode Recovery dV/dt2
TC = 25 °C
TC = 100 °C
L = 0.1mH
VDS
VGS
ID
IDM
IAS
EAS
dV/dt
Power Dissipation
Junction & Storage Temperature Range
TC = 25 °C
TC = 100 °C
PD
TJ, Tstg
1. GATE
2. DRAIN
3. SOURCE
LIMITS
100
±20
15
9
35
12
7.2
16.2
4.1
46
18
-55 to 150
UNITS
V
V
A
mJ
V/nS
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RJC
1Pulse width limited by maximum junction temperature.
2ID=15A,di/dt=100A/uS,VDD<BVdss,Starting Tj=25
TYPICAL
MAXIMUM
2.7
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
LIMITS UNIT
MIN TYP MAX
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V(BR)DSS
VGS(th)
IGSS
IDSS
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
VDS = 0V, VGS = ±20V
VDS = 80V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 125 °C
100
1.3 1.8
V
2.3
±100 nA
1
10 A
REV 1.1
1
D-51-5



No Preview Available !

NIKO-SEM
N-Channel Enhancement Mode
Field Effect Transistor
P8010BD
TO-252
Halogen-Free & Lead-Free
On-State Drain Current1
Drain-Source On-State
Resistance1
Forward Transconductance1
ID(ON)
RDS(ON)
gfs
VDS = 5V, VGS = 10V
VGS = 4.5V, ID = 10A
VGS = 10V , ID = 15A
VDS = 5V, ID = 15A
DYNAMIC
35 A
67 95
mΩ
61 85
25 S
Input Capacitance
Output Capacitance
Ciss
Coss
VGS = 0V, VDS = 25V, f = 1MHz
527
68
Reverse Transfer Capacitance
Crss
37
Gate Resistance
Rg VGS = 0V, VDS = 0V, f = 1MHz
1.5
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 10 V
VDS = 0.5V(BR)DSS, ID = 15A
VDS = 40V
ID 15A, VGS = 10V, RGEN =6Ω
18.5
2.7
5.1
11
48
80
73
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
pF
Ω
nC
nS
Continuous Current
Forward Voltage1
IS
VSD IF = 15A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
IF = 15A, dlF/dt = 100A / S
Qrr
1Pulse test : Pulse Width 300 sec, Duty Cycle 2.
2Independent of operating temperature.
15 A
1.1 V
33 nS
35 nC
REV 1.1
2
D-51-5



No Preview Available !

NIKO-SEM
N-Channel Enhancement Mode
Field Effect Transistor
P8010BD
TO-252
Halogen-Free & Lead-Free
Output Characteristics
18 VGS=10V
VGS=9V
VGS=7V
VGS=4V
15 VGS=5V
VGS=4.5V
12
Transfer Characteristics
18
15
12
9
6
VGS=3.5V
3
0
0123456
VDS, Drain-To-Source Voltage(V)
On-Resistance VS Temperature
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
VGS=10V
0.6 ID=15A
0.4
-50
-25 0
25 50 75 100 125 150
TJ , Junction Temperature(˚C)
9
25
6
125
3
-20
0
0123456
VGS, Gate-To-Source Voltage(V)
Capacitance Characteristic
700
600
CISS
500
400
300
200
100
0
0
COSS
CRSS
5 10 15 20 25 30
VDS, Drain-To-Source Voltage(V)
Gate charge Characteristics
10 Characteristics
VDS=50V
8 ID=15A
6
Source-Drain Diode Forward Voltage
100
10
4
1
150
25
2
0
0 4 8 12 16
Qg , Total Gate Charge(nC)
20
0.1
0.0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD, Source-To-Drain Voltage(V)
REV 1.1
3
D-51-5



No Preview Available !

NIKO-SEM
N-Channel Enhancement Mode
Field Effect Transistor
P8010BD
TO-252
Halogen-Free & Lead-Free
Safe Operating Area
100
Operation in This Area
is Limited by RDS(ON)
10
Single Pulse Maximum Power Dissipation
300
Single Pulse
240 RθJC = 2.7˚C/W
TC=25˚C
180
1ms
1
0.1
1
NOTE :
1.VGS= 10V
2.TC=25˚C
3.RθJC = 2.7˚C/W
4.Single Pulse
10
10ms
100ms
DC
100
VDS, Drain-To-Source Voltage(V)
120
60
0
0.001
0.01
0.1
1
10
Single Pulse Time(s)
100
Transient Thermal Response Curve
10
Duty cycle=0.5
0.2
0.1
0.05
0.02
0.01
1
0.1
single pulse
0.01
0.0001
0.001
Notes
1.Duty cycle, D= t1 / t2
2.RthJC = 2.7 /W
3.TJ-TC = P*RthJC(t)
4.RthJC(t) = r(t)*RthJC
0.01
0.1
1
T1 , Square Wave Pulse Duration[sec]
10
100
REV 1.1
4
D-51-5



P8010BD datasheet pdf
Download PDF
P8010BD pdf
View PDF for Mobile


Related : Start with P8010B Part Numbers by
P8010BD N-Channel Field Effect Transistor P8010BD
NIKO-SEM
P8010BD pdf
P8010BD N-Channel Enhancement Mode MOSFET P8010BD
UNIKC
P8010BD pdf
P8010BIS N-Channel Enhancement Mode MOSFET P8010BIS
UNIKC
P8010BIS pdf
P8010BIS N-Channel Field Effect Transistor P8010BIS
NIKO-SEM
P8010BIS pdf
P8010BT N-Channel Field Effect Transistor P8010BT
NIKO-SEM
P8010BT pdf
P8010BT N-Channel Enhancement Mode MOSFET P8010BT
UNIKC
P8010BT pdf
P8010BTF N-Channel Field Effect Transistor P8010BTF
NIKO-SEM
P8010BTF pdf
P8010BTF N-Channel Enhancement Mode MOSFET P8010BTF
UNIKC
P8010BTF pdf

Index :   0   1   2   3   4   5   6   7   8   9   A   B   C   D   E   F   G   H   I   J   K   L   M   N   O   P   Q   R   S   T   U   V   W   X   Y   Z   

This is a individually operated, non profit site. If this site is good enough to show, please introduce this site to others.
Since 2010   ::   HOME   ::   Contact