P8010BD Datasheet PDF - NIKO-SEM

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P8010BD
NIKO-SEM

Part Number P8010BD
Description N-Channel Field Effect Transistor
Page 4 Pages


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NIKO-SEM
N-Channel Enhancement Mode
Field Effect Transistor
P8010BD
TO-252
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
85mΩ
ID
15A
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
Avalanche Current
Avalanche Energy
MOSFET dV/dt Ruggedness
Peak Diode Recovery dV/dt2
TC = 25 °C
TC = 100 °C
L = 0.1mH
VDS
VGS
ID
IDM
IAS
EAS
dV/dt
Power Dissipation
Junction & Storage Temperature Range
TC = 25 °C
TC = 100 °C
PD
TJ, Tstg
1. GATE
2. DRAIN
3. SOURCE
LIMITS
100
±20
15
9
35
12
7.2
16.2
4.1
46
18
-55 to 150
UNITS
V
V
A
mJ
V/nS
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RJC
1Pulse width limited by maximum junction temperature.
2ID=15A,di/dt=100A/uS,VDD<BVdss,Starting Tj=25
TYPICAL
MAXIMUM
2.7
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
LIMITS UNIT
MIN TYP MAX
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V(BR)DSS
VGS(th)
IGSS
IDSS
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
VDS = 0V, VGS = ±20V
VDS = 80V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 125 °C
100
1.3 1.8
V
2.3
±100 nA
1
10 A
REV 1.1
1
D-51-5

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