P8008BDA Datasheet PDF - UNIKC

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P8008BDA
UNIKC

Part Number P8008BDA
Description N-Channel Enhancement Mode MOSFET
Page 8 Pages


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P8008BDA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
80V 68mΩ @VGS = 10V
ID
16A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 80
Gate-Source Voltage
VGS ±25
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
16
10
50
Avalanche Current
IAS 15
Avalanche Energy
L=0.1mH
EAS
11
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
39
15
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
3.2
62.5
UNITS
°C / W
REV 1.1
1 2015/7/29



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P8008BDA
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±25V
80
1.3 1.8 2.3
±100
Zero Gate Voltage Drain Current
IDSS
VDS = 64V, VGS = 0V
VDS = 60V, VGS = 0V , TJ = 125°C
1
10
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS =4.5V, ID = 10A
VGS = 10V, ID = 15A
VDS = 5V, ID = 15A
51 78
48 68
30
DYNAMIC
Input Capacitance
Ciss
558
Output Capacitance
Coss VGS = 0V, VDS = 25V, f = 1MHz
68
Reverse Transfer Capacitance
Crss
46
Gate Resistance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = 0V, f = 1MHz
VDS = 40V, VGS = 10V,
ID = 15A
VDS = 40V,
ID @ 15A, VGS = 10V, RGEN = 6Ω
1.2
13.5
1.8
5
14
12
38
16
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
Forward Voltage1
IS
VSD IF = 15A, VGS = 0V
16
1.3
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF=15A,dIF/dt=100A/mS
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
21
19
2Independent of operating temperature.
UNITS
V
nA
mA
S
pF
Ω
nC
nS
A
V
nS
nC
REV 1.1
2 2015/7/29



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P8008BDA
N-Channel Enhancement Mode MOSFET
REV 1.1
3 2015/7/29



No Preview Available !

P8008BDA
N-Channel Enhancement Mode MOSFET
REV 1.1
4 2015/7/29



P8008BDA datasheet pdf
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P8008BDA pdf
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