P6SMB68 Datasheet PDF - Taiwan Semiconductor

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P6SMB68
Taiwan Semiconductor

Part Number P6SMB68
Description Surface Mount Transient Voltage Suppressor
Page 8 Pages


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P6SMB6.8(A) - P6SMB220(A)
Taiwan Semiconductor
600W, 6.8V - 220V Surface Mount Transient Voltage Suppressor
FEATURES FEATURES
Low profile package
Ideal for automated placement
Glass passivated junction
Built-in strain relief
Excellent clamping capability
Typical IR less than 1μA above 10V
Fast response time: Typically less than
1.0ps from 0 volt to BV min
Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21
KEY PARAMETERS
PARAMETER
VALUE UNIT
VWM
VBR (uni-directional)
PPPSM
TJ MAX
Package
5.5 - 185
V
6.8 - 220
V
600 W
150 °C
DO-214AA (SMB)
Configuration
Single die
APPLICATIONS
Switching mode power supply (SMPS)
Adapters
TV
Monitor
MECHANICAL DATA
Case: DO-214AA (SMB)
Molding compound meets UL 94V-0 flammability rating
Moisture sensitivity level: level 1, per J-STD-020
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound
(halogen-free)
Terminal: Matte tin plated leads, solderable per J-STD-002
Meet JESD 201 class 2 whisker test
Polarity: As marked
Weight: 0.09 g (approximately)
DO-214AA (SMB)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
Non-repetitive peak impulse power dissipation with
10/1000μs waveform
Steady state power dissipation at TA=25°C (1)
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Forward Voltage @ IF=50A for Uni-directional only (2)
Junction temperature
SYMBOL
PPPSM
Ptot
IFSM
VF
TJ
PART NUMBER
600
3
100
3.5/5.0
-55 to +150
Storage temperature
TSTG
-55 to +150
Notes:
1. Non-repetitive Current Pulse Per Fig. 3 and Derated above TA=25°C Per Fig. 2
2. VF=3.5V on P6SMB6.8 - P6SMB91 Devices and VF=5.0V on P6SMB100 - P6SMB220 Device.
Devices for Bipolar Applications
1. For bidirectional use C or CA suffix for types P6SMB6.8 - types P6SMB220A
2. Electrical characteristics apply in both directions
UNIT
W
W
A
V
°C
°C
1 Version:N1701



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P6SMB6.8(A) - P6SMB220(A)
Taiwan Semiconductor
THERMAL PERFORMANCE
PARAMETER
Junction-to-case thermal resistance
Junction-to-ambient thermal resistance
SYMBOL
RӨJC
RӨJA
LIMIT
10
55
UNIT
°C/W
°C/W
ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)
Device
P6SMB6.8
P6SMB6.8A
P6SMB7.5
P6SMB7.5A
P6SMB8.2
P6SMB8.2A
P6SMB9.1
P6SMB9.1A
P6SMB10
P6SMB10A
P6SMB11
P6SMB11A
P6SMB12
P6SMB12A
P6SMB13
P6SMB13A
P6SMB15
P6SMB15A
P6SMB16
P6SMB16A
P6SMB18
P6SMB18A
P6SMB20
P6SMB20A
P6SMB22
P6SMB22A
P6SMB24
P6SMB24A
P6SMB27
P6SMB27A
P6SMB30
P6SMB30A
P6SMB33
P6SMB33A
P6SMB36
P6SMB36A
P6SMB39
P6SMB39A
P6SMB43
P6SMB43A
P6SMB47
P6SMB47A
P6SMB51
Device
Marking
Code
KDJ
KEJ
KFJ
KGJ
KHJ
KKJ
KLJ
KMJ
KNJ
KPJ
KQJ
KRJ
KSJ
KTJ
KUJ
KVJ
KWJ
KXJ
KYJ
KZJ
LDJ
LEJ
LFJ
LGJ
LHJ
LKJ
LLJ
LMJ
LNJ
LPJ
LQJ
LRJ
LSJ
LTJ
LUJ
LVJ
LWJ
LXJ
LYJ
LZJ
MDJ
MEJ
MFJ
Breakdown
voltage
VBR (V)
(Note 1)
Min. Max.
6.12 7.48
6.46 7.14
6.75 8.25
7.13 7.88
7.38 9.02
7.79 8.61
8.19 10.00
8.65 9.55
9.00 11.00
9.50 10.5
9.90 12.1
10.5 11.6
10.8 13.2
11.4 12.6
11.7 14.3
12.4 13.7
13.5 16.5
14.3 15.8
14.4 17.6
15.2 16.8
16.2 19.8
17.1 18.9
18.0 22.0
19.0 21.0
19.8 24.2
20.9 23.1
21.6 26.4
22.8 25.2
24.3 29.7
25.7 28.4
27.0 33.0
28.5 31.5
29.7 36.3
31.4 34.7
32.4 39.6
34.2 37.8
35.1 42.9
37.1 41.0
38.7 47.3
40.9 45.2
42.3 51.7
44.7 49.4
45.9 56.1
Test
Current
IT (mA)
Stand-Off
Voltage
@VWM
(V)
Maximum
Reverse
Leakage
@VWM
IDA)
Maximum
Peak Pulse
Current
IPPM(A)
(Note 2)
Maximum
Maximum
clamping
Temperature
voltage
Coefficient of
VC@IPP
(V)
VBR(%/°C)
10 5.50 1000 58 10.8 0.057
10 5.80 1000 60 10.5 0.057
10 6.05 500
53 11.7 0.061
10 6.40 500
55 11.3 0.061
10 6.63 200
50 12.5 0.065
10 7.02 200
52 12.1 0.065
1.0 7.37 50
45 13.8 0.068
1.0 7.78 50
47 13.4 0.068
1.0 8.10 10
42 15.0 0.073
1.0 8.55 10
43 14.5 0.073
1.0 8.92
1
38 16.2 0.075
1.0 9.40
1
40 15.6 0.075
1.0 9.72
1
36 17.3 0.078
1.0 10.2
1
37 16.7 0.078
1.0 10.5
1
33 19.0 0.081
1.0 11.1
1
34 18.2 0.081
1.0 12.1
1
28 22.0 0.084
1.0 12.8
1
29 21.2 0.084
1.0 12.9
1
26 23.5 0.086
1.0 13.6
1
28 22.5 0.086
1.0 14.5
1
23 26.5 0.088
1.0 15.3
1
25 25.5 0.088
1.0 16.2
1
21 29.1 0.090
1.0 17.1
1
22 27.7 0.090
1.0 17.8
1
19 31.9 0.092
1.0 18.8
1
20 30.6 0.092
1.0 19.4
1
18 34.7 0.094
1.0 20.5
1
19 33.2 0.094
1.0 21.8
1
16 39.1 0.096
1.0 23.1
1
16.8 37.5 0.096
1.0 24.3
1
14.0 43.5 0.097
1.0 25.6
1
15.0 41.4 0.097
1.0 26.8
1
13.0 47.7 0.098
1.0 28.2
1
13.8 45.7 0.098
1.0 29.1
1
12.0 52.0 0.099
1.0 30.8
1
12.6 49.9 0.099
1.0 31.6
1
11.1 56.4 0.100
1.0 33.3
1
11.6 53.9 0.100
1.0 34.8
1
10.0 61.9 0.101
1.0 36.8
1
10.6 59.3 0.101
1.0 38.1
1
9.2 67.8 0.101
1.0 40.2
1
9.7 64.8 0.101
1.0 41.3
1
8.5 73.5 0.102
2 Version:N1701



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P6SMB6.8(A) - P6SMB220(A)
Taiwan Semiconductor
ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)
Device
Device
Marking
Code
Breakdown voltage
VBR (V)
(Note 1)
Test
Current
IT (mA)
Stand-Off
Voltage
@VWM
(V)
Min. Max.
P6SMB51A
P6SMB56
P6SMB56A
P6SMB62
P6SMB62A
P6SMB68
P6SMB68A
P6SMB75
P6SMB75A
P6SMB82
P6SMB82A
P6SMB91
P6SMB91A
P6SMB100
P6SMB100A
P6SMB110
P6SMB110A
P6SMB120
P6SMB120A
P6SMB130
P6SMB130A
P6SMB150
P6SMB150A
P6SMB160
P6SMB160A
P6SMB170
P6SMB170A
P6SMB180
P6SMB180A
P6SMB200
P6SMB200A
P6SMB220
P6SMB220A
Notes:
MGJ
MHJ
MKJ
MLJ
MMJ
MNJ
MPJ
MQJ
MRJ
MSJ
MTJ
MUJ
MVJ
MWJ
MXJ
MYJ
MZJ
NDJ
NEJ
NFJ
NGJ
NHJ
NKJ
NLJ
NMJ
NNJ
NPJ
NQJ
NRJ
NSJ
NTJ
NUJ
NVJ
48.5 53.6
1.0
43.6
50.4 61.6
1.0
45.4
53.2 58.8
1.0
47.8
55.8 68.2
1.0
50.2
58.9 65.1
1.0
53.0
61.2 74.8
1.0
55.1
64.6 71.4
1.0
58.1
67.5 82.5
1.0
60.7
71.3 78.8
1.0
64.1
73.8 90.2
1.0
66.4
77.9 86.1
1.0
70.1
81.9 100
1.0
73.7
86.5 95.5
1.0
77.8
90 110 1.0 81.0
95 105 1.0 85.5
99 121 1.0 89.2
105 116
1.0
94.0
108 132
1.0
97.2
114 126 1.0 102.0
117 143 1.0 105.0
124 137 1.0 111.0
135 165 1.0 121.0
143 158 1.0 128.0
144 176 1.0 130.0
152 168 1.0 136.0
153 187 1.0 138.0
162 179 1.0 145.0
162 198 1.0 146.0
171 189 1.0 154.0
180 220 1.0 162.0
190 210 1.0 171.0
198 242 1.0 175.0
209 231 1.0 185.0
1. VBR measure after IT applied for 300μs, IT=square wave pulse or equivalent.
2. Surge current waveform per Figure. 3 and derate per Figure. 2.
3. For bipolar types having VWM of 10 volts and under, the ID limit is doubled.
4. For bidirectional use C or CA suffix for types P6SMB6.8 - P6SMB220A.
5. All terms and symbols are consistent with ANSI/IEEE C62.35.
Maximum
Reverse
Leakage
@VWM
IDA)
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
Maximum
Peak Pulse
Current
IPPM(A)
(Note 2)
8.9
7.8
8.1
7.0
7.4
6.4
6.8
5.8
6.1
5.3
5.5
4.8
5.0
4.3
4.5
3.9
4.1
3.6
3.8
3.3
3.5
2.9
3.0
2.7
2.8
2.5
2.6
2.4
2.5
2.1
2.2
1.8
1.9
Maximum Maximum
clamping Temperatur
voltage
e
VC@IPP Coefficient
(V) of VBR(%/°C)
70.1 0.102
80.5 0.103
77.0 0.103
89.0 0.104
85.0 0.104
98.0 0.104
92.0 0.104
108 0.105
103 0.105
118 0.105
113 0.105
131 0.106
125 0.106
144 0.106
137 0.106
158 0.107
152 0.107
173 0.107
165 0.107
187 0.107
179 0.107
215 0.108
207 0.108
230 0.108
219 0.108
244 0.108
234 0.108
258 0.108
246 0.108
287 0.108
274 0.108
342 0.108
328 0.108
3 Version:N1701



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P6SMB6.8(A) - P6SMB220(A)
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
PART NO.
SUFFIX
PACKING PACKING CODE
CODE
SUFFIX(*)
P6SMBxxxx
(Note 1)
H
R5
R4
M4
G
Note:
1. "xxxx" defines voltage from 6.8V (P6SMB6.8) to 220V (P6SMB220A)
*: Optional available
PACKAGE
SMB
SMB
SMB
PACKING
850 / 7" Plastic reel
3,000 / 13" Paper reel
3,000 / 13" Plastic reel
EXAMPLE P/N
EXAMPLE P/N
P6SMB20AHR5G
PART NO.
P6SMB20A
PART NO.
SUFFIX
H
PACKING
CODE
R5
PACKING CODE
SUFFIX
G
DESCRIPTION
AEC-Q101 qualified
Green compound
4 Version:N1701



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