P6SMB440 Datasheet PDF - Diotec Semiconductor

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P6SMB440
Diotec Semiconductor

Part Number P6SMB440
Description Surface mount unidirectional and bidirectional Transient Voltage Suppressor Diodes
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P6SMB220 ... P6SMB550CA
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P6SMB220 ... P6SMB550CA
Surface mount unidirectional and bidirectional Transient Voltage Suppressor Diodes
Unidirektionale und bidirektionale Spannungs-Begrenzer-Dioden für die Oberflächenmontage
Version 2006-07-04
Peak pulse power dissipation
5.4± 0.5 Impuls-Verlustleistung
Nominal breakdown voltage
Nominale Abbruch-Spannung
600 W
220...550 V
1.1 Plastic case
Kunststoffgehäuse
~ SMB
~ DO-214AA
Type
Typ
5± 0.5
Dimensions - Maße [mm]
Weight approx. – Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rollen
0.1 g
For bidirectional types, suppressor characteristics apply in both directions; add suffix “C” or “CA”.
Für bidirektionale Dioden gelten die Begrenzer-Eigenschaften in beiden Richtungen;
es ist das Suffix “C” oder “CA” zu ergänzen.
TVS diodes having stand-off voltage VWM = 5.0 ... 170 V: please refer to datasheet P6SMBJ5.0 ... 170CA
TVS-Dioden mit Sperrspannung VWM = 5.0 ... 170 V: siehe Datenblatt P6SMBJ5.0 ... 170CA
Maximum ratings and Characteristics
Peak pulse power dissipation (10/1000 µs waveform)
Impuls-Verlustleistung (Strom-Impuls 10/1000 µs)
Steady state power dissipation
Verlustleistung im Dauerbetrieb
Peak forward surge current, 60 Hz half sine-wave
Stoßstrom für eine 60 Hz Sinus-Halbwelle
Max. instantaneous forward voltage
Augenblickswert der Durchlass-Spannung
Operating junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Thermal resistance junction to terminal
Wärmewiderstand Sperrschicht – Anschluss
TA = 25°C
Grenz- und Kennwerte
PPPM 600 W 1)
TT = 75°C
TA = 25°C
IF = 25 A
PM(AV)
IFSM
VF
Tj
TS
RthA
5W
100 A 2)
< 3.0 V 2)
-50...+150°C
-50...+150°C
< 45 K/W 3)
RthT < 15 K/W
1 Non-repetitive pulse see curve IPP = f (t) / PPP = f (t)
Höchstzulässiger Spitzenwert eines einmaligen Impulses, siehe Kurve IPP = f (t) / PPP = f (t)
2 Unidirectional diodes only – Nur für unidirektionale Dioden
3 Mounted on P.C. board with 50 mm2 copper pads at each terminal
Montage auf Leiterplatte mit 50 mm2 Kupferbelag (Lötpad) an jedem Anschluss
© Diotec Semiconductor AG
http://www.diotec.com/
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Maximum ratings
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Type
Breakdown voltage at IT = 1 mA
Typ Abbruch-Spannung bei IT = 1 mA
P6SMB220
P6SMB220A
P6SMB250
P6SMB250A
P6SMB300
P6SMB300A
P6SMB350
P6SMB350A
P6SMB400
P6SMB400A
P6SMB440
P6SMB440A
P6SMB480
P6SMB480A
P6SMB530
P6SMB530A
P6SMB550
P6SMB550A
VBR [V]
220 ± 10%
198...242
220 ± 5%
209...231
250 ± 10%
225...275
250 ± 5%
237...263
300 ± 10%
270...330
300 ± 5%
285...315
350 ± 10%
315...385
350 ± 5%
332...368
400 ± 10%
360...440
400 ± 5%
380...420
440 ± 10%
396...484
440 ± 5%
418...462
480 ± 10%
432...528
480 ± 5%
456...504
530 ± 10%
477...583
530 ± 5%
503...556
550 ± 10%
495...605
550 ± 5%
522...577
P6SMB220 ... P6SMB550CA
Stand-off voltage
Sperrspannung
VWM [V]
175
185
202
214
243
256
284
300
324
342
356
376
388
408
429
477
445
495
Max. rev. current
Max. Sperrstrom
at / bei VWM
ID [µA]
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
Grenzwerte
Max. clamping voltage
Max. Begrenzer-Spannung
at / bei IPPM (10/1000 µs)
VC [V]
IPPM [A]
344 1.7
328 1.8
360 1.7
344 1.7
430 1.4
414 1.4
504 1.2
482 1.2
574 1.0
548 1.1
631 1.0
602 1.0
686 0.87
658 0.91
764 0.79
729 0.82
793 0.76
760 0.79
TVS diodes having stand-off voltage VWM = 5.0 ... 170 V: please refer to datasheet P6SMBJ5.0 ... 170CA
TVS-Dioden mit Sperrspannung VWM = 5.0 ... 170 V: siehe Datenblatt P6SMBJ5.0 ... 170CA
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P6SMB220 ... P6SMB550CA
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[%]
100
80
60
40
IPP
20
PPP
0
0 TA 50 100 150 [°C]
1 Peak pulse power/current vs. ambient temperature1)
Impuls-Spitzenleistung/Strom vs. Umgebungstemp.1)
tr = 10 µs
100
[%]
80
60
40
IPP
20
PPP
0
0
PPPM/2
IPPM/2
tP
1 23
10/1000µs - pulse waveform
10/1000µs - Impulsform
[ms] 4
102
[kW]
10
1
PPP
0.1
0.1µs tP 1µs
10µs
100µs
1ms
10ms
Non repetitive peak pulse power versus pulse width (10/1000 wave form)
Einzel-Impuls-Spitzenleistung in Abh. von der Pulsdauer (10/1000-Impuls)
1 Mounted on P.C. board with 50 mm2 copper pads at each terminal
Montage auf Leiterplatte mit 50 mm2 Kupferbelag (Lötpad) an jedem Anschluss
© Diotec Semiconductor AG
http://www.diotec.com/
3



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