P6015CDG Datasheet PDF - UNIKC

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P6015CDG
UNIKC

Part Number P6015CDG
Description N-Channel Enhancement Mode MOSFET
Page 5 Pages


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P6015CDG
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
150V
60mΩ @VGS = 10V
ID
20A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±12
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
20
15
60
Avalanche Current
IAS 20
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.47mH
L = 0.47mH
EAS
EAR
94
35
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
48
20
Operating Junction & Storage Temperature Range
Lead Temperature (1/16" from case for 10 sec.)
TJ, TSTG
TL
-55 to 150
275
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
2.6
62.5
UNITS
°C / W
Ver 1.2
1 2013-5-24



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P6015CDG
N-Channel Enhancement Mode MOSFET
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±12V
150
0.45 0.75 1.20
±100
Zero Gate Voltage Drain Current
On-State Drain Current1
IDSS
ID(ON)
VDS = 120V, VGS = 0V
VDS = 100V, VGS = 0V , TJ = 125 °C
VDS = 5V, VGS = 5V
60
1
10
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 3V, ID = 3A
VGS = 5V, ID = 10A
VGS = 10V, ID = 15A
VDS = 5V, ID = 10A
62 80
56 70
50 60
26
DYNAMIC
Input Capacitance
Ciss
7660
Output Capacitance
Coss VGS = 0V, VDS = 25V, f = 1MHz
725
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 0.5V(BR)DSS, VGS = 4.5V, ID = 10A
VDS = 75V,
ID @ 10A, VGS = 10V, RGS = 16Ω
420
107 140
18
60
18
115
338
384
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Pulsed Current3
ISM
Forward Voltage1
VSD IF = IS, VGS = 0V
20
60
1.3
Reverse Recovery Time
trr
57
Peak Reverse Recovery Current IRM(REC)
IF = IS, dlF/dt = 100A / mS
Reverse Recovery Charge
Qrr
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
60
0.13
3Pulse width limited by maximum junction temperature.
UNITS
V
nA
mA
A
S
pF
nC
nS
A
V
nS
A
mC
Ver 1.2
2 2013-5-24



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P6015CDG
N-Channel Enhancement Mode MOSFET
Ver 1.2
3 2013-5-24



No Preview Available !

P6015CDG
N-Channel Enhancement Mode MOSFET
Ver 1.2
4 2013-5-24



P6015CDG datasheet pdf
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P6015CDG pdf
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UNIKC
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