P6015CDG Datasheet PDF - UNIKC

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P6015CDG
UNIKC

Part Number P6015CDG
Description N-Channel Enhancement Mode MOSFET
Page 5 Pages


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P6015CDG
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
150V
60mΩ @VGS = 10V
ID
20A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±12
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
20
15
60
Avalanche Current
IAS 20
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.47mH
L = 0.47mH
EAS
EAR
94
35
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
48
20
Operating Junction & Storage Temperature Range
Lead Temperature (1/16" from case for 10 sec.)
TJ, TSTG
TL
-55 to 150
275
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
2.6
62.5
UNITS
°C / W
Ver 1.2
1 2013-5-24

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P6015CDG N-Channel Enhancement Mode MOSFET P6015CDG
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