P6015AD Datasheet PDF - UNIKC

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P6015AD
UNIKC

Part Number P6015AD
Description N-Channel Enhancement Mode MOSFET
Page 5 Pages


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P6015AD
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
150V
60mΩ @VGS = 10V
ID
25A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
25
16
100
Avalanche Current
IAS 20
Avalanche Energy
L = 0.1mH
EAS
20
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
83
33
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
TYPICAL
MAXIMUM UNITS
1.5 °C / W
Ver 1.1
1 2013-3-26



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P6015AD
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
150
234
±100
Zero Gate Voltage Drain Current
On-State Drain Current1
IDSS
ID(ON)
VDS = 120V, VGS = 0V
VDS = 100V, VGS = 0V , TJ = 125 °C
VDS = 10V, VGS = 10V
100
1
10
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 7V, ID = 10A
VGS = 10V, ID = 10A
VDS = 10V, ID = 10A
50 80
40 60
10
DYNAMIC
Input Capacitance
Ciss
2960
Output Capacitance
Coss VGS = 0V, VDS = 25V, f = 1MHz
225
Reverse Transfer Capacitance
Crss
Total Gate Charge2
Qg
Gate-Source Charge2
Qgs VDS = 75V, VGS = 10V, ID = 10A
Gate-Drain Charge2
Qgd
Turn-On Delay Time2
td(on)
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDD = 75V,
ID @ 10A, VGS = 10V, RGS = 6Ω
Fall Time2
tf
126
54
16
21
16
38
64
38
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
Forward Voltage1
IS
VSD IF = 10A, VGS = 0V
25
1.3
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 10A, dlF/dt = 100A / mS
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
77
222
2Independent of operating temperature.
UNIT
V
nA
mA
A
S
pF
nC
nS
A
V
nS
nC
Ver 1.1
2 2013-3-26



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P6015AD
N-Channel Enhancement Mode MOSFET
Ver 1.1
3 2013-3-26



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P6015AD
N-Channel Enhancement Mode MOSFET
Ver 1.1
4 2013-3-26



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