P6010DTG Datasheet PDF - UNIKC

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P6010DTG
UNIKC

Part Number P6010DTG
Description P-Channel Enhancement Mode MOSFET
Page 5 Pages


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P6010DTG
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-100V
60mΩ @VGS = -10V
ID
-27A
TO-220
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -100
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
-27
-17
-100
Avalanche Current
IAS -54
Avalanche Energy
L = 0.1mH
EAS
143
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
83
33
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM UNITS
1.5
°C / W
62.5
Ver 1.0
1 2012/7/25

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