P6010DTG Datasheet PDF - UNIKC

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P6010DTG
UNIKC

Part Number P6010DTG
Description P-Channel Enhancement Mode MOSFET
Page 5 Pages


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P6010DTG
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-100V
60mΩ @VGS = -10V
ID
-27A
TO-220
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -100
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
-27
-17
-100
Avalanche Current
IAS -54
Avalanche Energy
L = 0.1mH
EAS
143
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
83
33
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM UNITS
1.5
°C / W
62.5
Ver 1.0
1 2012/7/25



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P6010DTG
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current1
V(BR)DSS
VGS = 0V, ID = -250mA
-100
VGS(th)
VDS = VGS, ID = -250mA
-1.5 -2.6 -4.0
IGSS VDS = 0V, VGS = ±20V
±250
IDSS
VDS = -80V, VGS = 0V
VDS = -80V, VGS = 0V , TJ = 125 °C
-1
-10
ID(ON)
VDS = -5V, VGS = -10V
-100
UNIT
V
nA
mA
A
Drain-Source On-State Resistance1 RDS(ON)
VGS = -10V, ID = -20A
52 60
Forward Transconductance1
gfs
VDS = -5V, ID = -20A
35
DYNAMIC
Input Capacitance
Ciss
5450
Output Capacitance
Coss
VGS = 0V, VDS = -25V, f = 1MHz
320
Reverse Transfer Capacitance
Crss
205
Gate Resistance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = 0V, f = 1MHz
VDS = 0.5V(BR)DSS,
ID = -20A, VGS = -10V
VDS = -50V, ID @ -20A,
VGS = -10V, RGS = 2.5Ω
4.6
89
26
24
18
87
80
82
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = -20A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = -20A, dlF/dt = 100A / mS
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
126
0.78
2Independent of operating temperature.
-27
-1.3
S
pF
Ω
nC
nS
A
V
nS
mC
Ver 1.0
2 2012/7/25



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P6010DTG
P-Channel Enhancement Mode MOSFET
Ver 1.0
3 2012/7/25



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P6010DTG
P-Channel Enhancement Mode MOSFET
Ver 1.0
4 2012/7/25



P6010DTG datasheet pdf
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P6010DTG pdf
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