P6010DTFG Datasheet PDF - UNIKC

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P6010DTFG
UNIKC

Part Number P6010DTFG
Description P-Channel Enhancement Mode MOSFET
Page 5 Pages


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P6010DTFG
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-100V
60mΩ @VGS = -10V
ID
-24A
TO-220F
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -100
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1,2
TC = 25 °C
TC = 100 °C
ID
IDM
-24
-15
-96
Avalanche Current
IAS -52
Avalanche Energy
L = 0.1mH
EAS
139
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
62
15
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
1Pulse width limited by maximum junction temperature.
2Limited by package.
SYMBOL
RqJC
TYPICAL
MAXIMUM UNITS
2 °C / W
Ver 1.0
1 2012/4/16

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