P6010DTFG Datasheet PDF - UNIKC

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P6010DTFG
UNIKC

Part Number P6010DTFG
Description P-Channel Enhancement Mode MOSFET
Page 5 Pages


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P6010DTFG
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-100V
60mΩ @VGS = -10V
ID
-24A
TO-220F
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -100
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1,2
TC = 25 °C
TC = 100 °C
ID
IDM
-24
-15
-96
Avalanche Current
IAS -52
Avalanche Energy
L = 0.1mH
EAS
139
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
62
15
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
1Pulse width limited by maximum junction temperature.
2Limited by package.
SYMBOL
RqJC
TYPICAL
MAXIMUM UNITS
2 °C / W
Ver 1.0
1 2012/4/16



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P6010DTFG
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage V(BR)DSS
VGS = 0V, ID = -250mA
-100
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = -250mA
-1.5 -2.6 -4.0
Gate-Body Leakage
IGSS VDS = 0V, VGS = ±20V
±250
Zero Gate Voltage Drain Current
IDSS
VDS = -80V, VGS = 0V
VDS = -80V, VGS = 0V , TJ = 125 °C
-1
-10
On-State Drain Current1
ID(ON)
VDS = -5V, VGS = -10V
-96
Drain-Source On-State Resistance1 RDS(ON)
VGS = -10V, ID = -20A
50 60
Forward Transconductance1 gfs VDS = -15V, ID = -20A
30
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
VGS = 0V, VDS = -25V, f = 1MHz
5180
324
207
Gate Resistance
Rg VGS = 0V, VDS = 0V, f = 1MHz
4.9
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Qg
Qgs
Qgd
VDS = 0.5V(BR)DSS,
ID = -20A, VGS = -10V
98
18
24
Turn-On Delay Time2
td(on)
18
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDS = -50V, ID @ -20A,
VGS = -10V, RGS = 2.5Ω
88
85
Fall Time2
tf
81
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = -20A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = -20A, dlF/dt = 100A / mS
65
178
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
-24
-1.3
UNIT
V
nA
mA
A
mΩ
S
pF
Ω
nC
nS
A
V
nS
nC
Ver 1.0
2 2012/4/16



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P6010DTFG
P-Channel Enhancement Mode MOSFET
Ver 1.0
3 2012/4/16



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P6010DTFG
P-Channel Enhancement Mode MOSFET
Ver 1.0
4 2012/4/16



P6010DTFG datasheet pdf
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P6010DTFG pdf
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UNIKC
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