P6010DDG Datasheet PDF - NIKO-SEM

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P6010DDG
NIKO-SEM

Part Number P6010DDG
Description N-Channel Field Effect Transistor
Page 7 Pages


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NIKO-SEM
P-Channel Logic Level Enhancement P6010DDG
Mode Field Effect Transistor
TO-252
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-100V
60mΩ
ID
-20A
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
L = 0.1mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
VDS
VGS
ID
IDM
IAS
EAS
PD
Tj, Tstg
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
Junction-to-Case
RθJc
Junction-to-Ambient
RθJA
1Pulse width limited by maximum junction temperature.
1. GATE
2. DRAIN
3. SOURCE
LIMITS
-100
±20
-20
-12
-60
-54
149
50
20
-55 to 150
UNITS
V
V
A
mJ
W
°C
MAXIMUM
2.5
75
UNITS
°C / W
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
LIMITS
UNIT
MIN TYP MAX
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current1
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(ON)
VGS = 0V, ID = -250µA
VDS = VGS, ID = -250µA
VDS = 0V, VGS = ±20V
VDS = -80V, VGS = 0V
VDS = -80V, VGS = 0V, TJ = 125 °C
VDS = -5V, VGS = -10V
-100
-1.5 -2.7
-60
V
-4
±250 nA
1
µA
10
A
REV 1.1
Apr-15-2010
1

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