P6010DDG Datasheet PDF - NIKO-SEM

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P6010DDG
NIKO-SEM

Part Number P6010DDG
Description N-Channel Field Effect Transistor
Page 7 Pages


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NIKO-SEM
P-Channel Logic Level Enhancement P6010DDG
Mode Field Effect Transistor
TO-252
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-100V
60mΩ
ID
-20A
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
L = 0.1mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
VDS
VGS
ID
IDM
IAS
EAS
PD
Tj, Tstg
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
Junction-to-Case
RθJc
Junction-to-Ambient
RθJA
1Pulse width limited by maximum junction temperature.
1. GATE
2. DRAIN
3. SOURCE
LIMITS
-100
±20
-20
-12
-60
-54
149
50
20
-55 to 150
UNITS
V
V
A
mJ
W
°C
MAXIMUM
2.5
75
UNITS
°C / W
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
LIMITS
UNIT
MIN TYP MAX
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current1
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(ON)
VGS = 0V, ID = -250µA
VDS = VGS, ID = -250µA
VDS = 0V, VGS = ±20V
VDS = -80V, VGS = 0V
VDS = -80V, VGS = 0V, TJ = 125 °C
VDS = -5V, VGS = -10V
-100
-1.5 -2.7
-60
V
-4
±250 nA
1
µA
10
A
REV 1.1
Apr-15-2010
1



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NIKO-SEM
P-Channel Logic Level Enhancement P6010DDG
Mode Field Effect Transistor
TO-252
Halogen-Free & Lead-Free
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = -7V, ID = -18A
VGS = -10V, ID = -20A
VDS = -5V, ID = -20A
DYNAMIC
53 72
mΩ
51 60
35 S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Ciss
Coss
Crss
Rg
VGS = 0V, VDS = -50V, f = 1MHz
VGS = 0V, VDS = 0V, f = 1MHz
5520
315
193
4.6
pF
Ω
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 0.5V(BR)DSS, VGS = -10V,
ID = -20A
VDS = -20V,
ID -1A, VGS = -10V, RGS = 6Ω
92
24
25
20
25
120
125
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
Forward Voltage1
IS
VSD IF = -20A, VGS = 0V
-20
-1.3
Reverse Recovery Time
Reverse Recovery Charge
trr
IF = -20A, dlF/dt = 100A / µS
Qrr
1Pulse test : Pulse Width 300 µsec, Duty Cycle 2.
2Independent of operating temperature.
84.3
256
nC
nS
A
V
nS
nC
REMARK: THE PRODUCT MARKED WITH “P6010DDG”, DATE CODE or LOT #
REV 1.1
Apr-15-2010
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NIKO-SEM
P-Channel Logic Level Enhancement P6010DDG
Mode Field Effect Transistor
TO-252
Halogen-Free & Lead-Free
Output Characteristics
25
VGS =-10V
20
VGS = -9V
VGS = -8V
VGS = -7V
VGS =-6V
15
10 VGS =-5V
VGS=-4.5V
5
0
0 12 34 5
-VDS, Drain-To-Source Voltage(V)
On-Resistance VS Gate-To-Source
300
250
200
150
100
50
0
0 2 4 6 8 10
-VGS, Gate-To-Source Voltage(V)
Transfer Characteristics
25
20
15
On-Resistance VS Drain Current
0.12
0.11
0.10
0.09
0.08
0.07
0.06
0.05
VGS = -7V
VGS = -10V
0.04
0
5
10 15
20
-ID , Drain-To-Source Current
25
On-Resistance VS Temperature
RDS(ON) 2.2
RDS(ON) 2.0
RDS(ON) 1.8
RDS(ON) 1.6
RDS(ON) 1.4
RDS(ON) 1.2
RDS(ON) 1.0
RDS(ON)
RDS(ON)
0.8 VGS= -10V
ID= -20A
0.6
-50 -25 0 25 50 75 100 125 150
TJ , Junction Temperature(˚C)
Gate charge Characteristics
10
Characteristics
8
ID= -20A
VDS= -50V
6
10 4
5 125
25
-20
0
0123456 78
-VGS, Gate-To-Source Voltage(V)
2
0
0
REV 1.1
3
20 40 60 80
Qg , Total Gate Charge
100
Apr-15-2010



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NIKO-SEM
P-Channel Logic Level Enhancement P6010DDG
Mode Field Effect Transistor
TO-252
Halogen-Free & Lead-Free
Capacitance Characteristic
6.00E+03
Body Diode Forward Voltage VS Source current
1 .0 E + 0 2
5.00E+03
4.00E+03
3.00E+03
2.00E+03
Cis s
1.0E+01
1 .0 E + 0 0
1 .0 E - 0 1
1 .0 E -0 2
1.0E-03
TJ =150°C
TJ =25° C
1.00E+03
0.00E+00
Cos s
Cr s s
0 5 10 15 20 25
-VDS, Drain-To-Source Voltage(V)
30
Safe Operating Area
100
Operation in
This Area is
Lim ite d by RDS(ON)
100us
10
1.0E-04
1.0E-05
0.1 0.3 0.5 0.7 0.9 1.1
-VSD, Source-To-Drain Voltage(V)
1.3
Single Pulse Maximum Power Dissipation
2000
1500
SINGLE PULSE
RθJC = 2.5˚ C/W
TC=25˚ C
1m s
1000
1 10m s
NOTE :
1.VGS= 10V
2.TC=25˚ C
3.RθJC = 2.5˚ C/W
4.Single Pulse
1010Sm s
DC
0.1
0.1 1 10 100
-VDS, Drain-To-Source Voltage(V)
1000
500
0
0.0001
0.001
0.01
0.1
Single Pulse Time(s)
1.00E+01
Transient Thermal Response Curve
1
10
1.00E+00
Duty Cycle=0.5
1.00E-01
0.2
0.1
0.05
0.02
0.01
single Pluse
1.00E-02
1.E-05
1.E-04
1.E-03
1.E-02
T1 , Square Wave Pulse Duration[sec]
REV 1.1
4
Note
1.Duty cycle, D= t1 / t2
2.RthJC = 2.5 oC/W
3.TJ-TC = P*RthJC(t)
4.RthJC(t) = r(t)*RthJC
1.E-01
1.E+00
Apr-15-2010



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