P6006BD Datasheet PDF - NIKO-SEM

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P6006BD
NIKO-SEM

Part Number P6006BD
Description N-Channel Field Effect Transistor
Page 4 Pages


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NIKO-SEM
N-Channel Logic Level Enhancement
P6006BD
Mode Field Effect Transistor
TO-252
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
60 60mΩ
ID
21A
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 70 °C
Power Dissipation
TC = 25 °C
TC = 70 °C
Operating Junction & Storage Temperature Range
VDS
VGS
ID
IDM
PD
Tj, Tstg
1.GATE
2.DRAIN
3.SOURCE
LIMITS
60
±20
21
17
85
50
32
-55 to 150
UNITS
V
V
A
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RθJc
Junction-to-Ambient
RθJA
1Pulse width limited by maximum junction temperature.
TYPICAL
MAXIMUM
2.5
75
UNITS
°C / W
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current1
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(ON)
STATIC
VGS = 0V, ID = 250µA
VDS = VGS, ID = 250µA
VDS = 0V, VGS = ±20V
VDS = 48V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 55 °C
VDS = 5V, VGS = 10V
LIMITS
UNIT
MIN TYP MAX
60
1 1.5 2.5
V
±250 nA
1
10 µA
21 A
REV 1.0
1 Oct-29-2010



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NIKO-SEM
N-Channel Logic Level Enhancement
P6006BD
Mode Field Effect Transistor
TO-252
Halogen-Free & Lead-Free
Drain-Source On-State Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 5V, ID = 8A
VGS = 10V, ID = 12A
VDS = 10V, ID = 10A
60 80
mΩ
48 60
12 S
DYNAMIC
Input Capacitance
Output Capacitance
Ciss
Coss VGS = 0V, VDS = 25V, f = 1MHz
584
79
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 0.5V(BR)DSS, VGS = 10V,
ID = 10A
VDD = 30V
ID 1A, VGS = 10V, RGEN = 6Ω
44
11.5
2.1
2.5
10
7.3
17.5
5.5
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD
1Pulse test : Pulse Width 300 µsec, Duty Cycle 2%.
2Independent of operating temperature.
IF = IS, VGS = 0V
12
1.2
pF
nC
nS
A
V
REV 1.0
2 Oct-29-2010



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NIKO-SEM
N-Channel Logic Level Enhancement
P6006BD
Mode Field Effect Transistor
TO-252
Halogen-Free & Lead-Free
TYPICAL PERFORMANCE CHARACTERISTICS
REV 1.0
Body Diode Forward Voltage
100
V GS= 0V
10
1
0.1
0.01
0.001
T C = 125°C
25° C
-55° C
0.0001
0.2
0.4 0.6 0.8 1.0
VSD - Body Diode Forward Voltage(V)
1.2
3 Oct-29-2010



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NIKO-SEM
N-Channel Logic Level Enhancement
P6006BD
Mode Field Effect Transistor
TO-252
Halogen-Free & Lead-Free
Safe Operating Area
1000
100
Operation in This Area
is Lim ited by RDS(ON)
10
1
0.1
0.1
NOTE :
1.VGS= 10V
2.TC=25˚ C
3.RθJC =2.5˚ C/W
4.Single Pulse
1 10
VDS , Drain-To-Source Voltage(V)
100us
1m s
10m s
100m s
1s
DC
100
Single Pulse Maximum Power Disspation
2000
1750
1500
SINGLE PULSE
RθJC= 2.5˚ C/W
TC=25˚ C
1250
1000
750
500
250
0
0.0001
0.001
0.01
0.1
Single Pulse Time(s)
1
Transient Thermal Response Curve
10 0
D=0.5
0.2
0.1
10 -1
0.05
0.02
0.01
10 -2 single pulse
Note :
1. Duty Factor, D=t1/ t2
2. TJM - TC=PDM*ZθJC(t)
3.Z θ JC(t)= r(t)*R θ JC(t)
PDM
t1
t2
10 -5
10 -4
10 -3
10 -2
10 -1
10 0
101
t1,Square Wave Pulse Duration[sec]
REV 1.0
4 Oct-29-2010



P6006BD datasheet pdf
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P6006BD pdf
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