P5015BD Datasheet PDF - UNIKC

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P5015BD
UNIKC

Part Number P5015BD
Description N-Channel Enhancement Mode MOSFET
Page 5 Pages


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P5015BD
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
150V
50mΩ @VGS = 10V
ID
24A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 150
Gate-Source Voltage
VGS ±20
Continuous Drain Current1
Pulsed Drain Current2
TC = 25 °C
TC = 100 °C
ID
IDM
24
15
90
Avalanche Current
IAS 19
Avalanche Energy
L=0.1mH
EAS
18
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
78
31
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
2Limited by package.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
1.6
62.5
UNITS
°C / W
Rev 1.0
1 2015/5/4



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P5015BD
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
150
1.5 2.1 4
±250
Zero Gate Voltage Drain Current
IDSS
VDS = 120V, VGS = 0V
VDS = 100V, VGS = 0V , TJ = 125°C
1
10
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 4.5V, ID = 4A
VGS = 10V, ID = 20A
VDS = 5V, ID = 20A
47 90
40 50
36
DYNAMIC
Input Capacitance
Ciss
4658
Output Capacitance
Coss VGS = 0V, VDS = 25V, f = 1MHz
172
Reverse Transfer Capacitance
Crss
123
Gate Resistance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = 0V, f =1MHz
VDS = 75V, VGS = 10V,
ID = 20A
VDS = 75V,
ID @ 20A, VGS = 10V, RGEN = 6Ω
2.5
88.4
18.1
27.2
35
225
175
210
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
Forward Voltage1
IS
VSD IF = 20A, VGS = 0V
24
1.4
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 20A, dIF/dt=100A/mS
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
69
208
2Independent of operating temperature.
UNITS
V
nA
mA
S
pF
Ω
nC
nS
A
V
nS
nC
Rev 1.0
2 2015/5/4



No Preview Available !

P5015BD
N-Channel Enhancement Mode MOSFET
Rev 1.0
3 2015/5/4



No Preview Available !

P5015BD
N-Channel Enhancement Mode MOSFET
Rev 1.0
4 2015/5/4



P5015BD datasheet pdf
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P5015BD pdf
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