P4506BD Datasheet PDF - UNIKC

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P4506BD
UNIKC

Part Number P4506BD
Description N-Channel Enhancement Mode MOSFET
Page 5 Pages


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P4506BD
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
60V 45mΩ @VGS = 10V
ID
22A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 60
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
22
18
80
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
42
27
Operating Junction & Storage Temperature Range
Lead Temperature (1/16" from case for 10 sec.)
TJ, TSTG
TL
-55 to 150
275
UNITS
V
A
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
3
75
UNITS
°C / W
Ver 1.1
1 2013-3-25

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