P4506BD Datasheet PDF - UNIKC

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P4506BD
UNIKC

Part Number P4506BD
Description N-Channel Enhancement Mode MOSFET
Page 5 Pages


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P4506BD
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
60V 45mΩ @VGS = 10V
ID
22A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 60
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
22
18
80
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
42
27
Operating Junction & Storage Temperature Range
Lead Temperature (1/16" from case for 10 sec.)
TJ, TSTG
TL
-55 to 150
275
UNITS
V
A
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
3
75
UNITS
°C / W
Ver 1.1
1 2013-3-25



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P4506BD
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
60
1.0 1.5 3.0
±250
Zero Gate Voltage Drain Current
On-State Drain Current1
IDSS
ID(ON)
VDS = 48V, VGS = 0V
VDS = 40V, VGS = 0V , TJ = 55 °C
VDS = 5V, VGS = 10V
80
1
10
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 5V, ID = 10A
VGS = 10V, ID = 15A
VDS = 10V, ID = 15A
42 60
35 45
15
DYNAMIC
Input Capacitance
Ciss
790
Output Capacitance
Coss
VGS = 0V, VDS = 25V, f = 1MHz
98
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 0.5V(BR)DSS, VGS = 10V,
ID = 5A
VDD = 30V,
ID@ 1A, VGS = 10V, RGEN = 6Ω
42
15.2
2.9
3.2
13.5
9.8
23
7.2
22
24
18
40
16
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
IF = Is, VGS = 0V
15
1.3
2Independent of operating temperature.
UNIT
V
nA
mA
A
S
pF
nC
nS
A
V
Ver 1.1
2 2013-3-25



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P4506BD
N-Channel Enhancement Mode MOSFET
Ver 1.1
3 2013-3-25



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P4506BD
N-Channel Enhancement Mode MOSFET
Ver 1.1
4 2013-3-25



P4506BD datasheet pdf
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P4506BD pdf
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