P4506BD Datasheet PDF - NIKO-SEM

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P4506BD
NIKO-SEM

Part Number P4506BD
Description N-Channel Field Effect Transistor
Page 5 Pages


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NIKO-SEM
N-Channel Logic Level Enhancement
Mode Field Effect Transistor
P4506BD
TO-252
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
60 45mΩ
ID
22A
D
G
S
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 70 °C
Power Dissipation
TC = 25 °C
TC = 70 °C
Operating Junction & Storage Temperature Range
Lead Temperature (1/16” from case for 10 sec.)
VDS
VGS
ID
IDM
PD
Tj, Tstg
TL
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RθJc
Junction-to-Ambient
RθJA
1Pulse width limited by maximum junction temperature.
TYPICAL
1.GATE
2.DRAIN
3.SOURCE
LIMITS
60
±20
22
18
80
42
27
-55 to 150
275
UNITS
V
V
A
W
°C
MAXIMUM
3
75
UNITS
°C / W
°C / W
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V(BR)DSS
VGS(th)
IGSS
IDSS
STATIC
VGS = 0V, ID = 250μA
VDS = VGS, ID = 250μA
VDS = 0V, VGS = ±20V
VDS = 48V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 55 °C
LIMITS
UNIT
MIN TYP MAX
60
1 1.5 3.0
V
±250 nA
1
10 μA
REV 1.0
1 Mar-04-2009



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NIKO-SEM
N-Channel Logic Level Enhancement
Mode Field Effect Transistor
P4506BD
TO-252
Halogen-Free & Lead-Free
On-State Drain Current1
Drain-Source On-State
Resistance1
Forward Transconductance1
ID(ON)
RDS(ON)
gfs
VDS = 5V, VGS = 10V
VGS = 5V, ID = 10A
VGS = 10V, ID = 15A
VDS = 10V, ID = 15A
80 A
42 60
mΩ
35 45
15 S
DYNAMIC
Input Capacitance
Ciss
790
Output Capacitance
Coss VGS = 0V, VDS = 25V, f = 1MHz
98
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 0.5V(BR)DSS, VGS = 10V,
ID = 5A
VDD = 30V
ID 1A, VGS = 10V, RGEN = 6Ω
42
15.2
2.9
3.2
13.5
9.8
23
7.2
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD
1Pulse test : Pulse Width 300 μsec, Duty Cycle 2%.
2Independent of operating temperature.
IF = IS, VGS = 0V
22
24
18
40
16
15
1.3
pF
nC
nS
A
V
REMARK: THE PRODUCT MARKED WITH “P4506BD”, DATE CODE or LOT #
REV 1.0
2 Mar-04-2009



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NIKO-SEM
N-Channel Logic Level Enhancement
Mode Field Effect Transistor
P4506BD
TO-252
Halogen-Free & Lead-Free
REV 1.0
100
V GS= 0V
10
1
0.1
0.01
T J = 125° C
25° C
-55° C
0.001
0.0001
0
0.4 0.6 0.8 1.0
VSD - Body Diode Forward Voltage(V)
1.2
1.4
3 Mar-04-2009



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NIKO-SEM
N-Channel Logic Level Enhancement
Mode Field Effect Transistor
P4506BD
TO-252
Halogen-Free & Lead-Free
1500
1250
1000
750
500
250
0
0.0001
0.001
0.01
SINGLE PULSE
RθJC = 3° C/W
Tc=25° C
0.1 1
10
100
10
Operation in This
Area is Lim ited
by RDS(ON)
1
NOTE :
1.VGS= 10V
2.Tc=25° C
3.RθJc = 3° C/W
4.Single Pulse
0.1
1
10
100uS
1m s
10m s
DC
100
2
1
Duty Cycle = 0.5
0.2
0.1 0.1
0.05
0.02
Single Pulse
0.01
10-5
10-4
Transient Thermal Response Curve
10-3
10-2
10-1
T1 , Square Wave Pulse Duration[sec]
Notes:
PDM
t1 t2
1. Duty Cycle, D=
t1
t2
2. Per Unit Base = RthJc = 3°CW
3. TJM - Tc =PDMZthJC(t)
4. ZthJC(t) = r(t) * RthJC
1 10
100
REV 1.0
4 Mar-04-2009



P4506BD datasheet pdf
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P4506BD pdf
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