P3710BTF Datasheet PDF - UNIKC


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P3710BTF
UNIKC

Part Number P3710BTF
Description N-Channel Enhancement Mode MOSFET
Page 8 Pages

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P3710BTF
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
37mΩ @VGS = 10V
ID
19A
TO-220F
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 100
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
19
12
75
Avalanche Current
Avalanche Energy2
IAS 15.3
EAS 117
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
31
12.5
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
2Starting Tj =25 °C,L=1mH,VDD=50V
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
4
62.5
UNITS
°C / W
REV 1.0
1 2017/1/19



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P3710BTF
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V(BR)DSS
VGS(th)
IGSS
IDSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
VDS = 80V, VGS = 0V
VDS = 80V, VGS = 0V , TJ = 125 °C
100
1
1.8 3
±100
1
10
V
nA
mA
Drain-Source On-State
Resistance1
RDS(ON)
VGS = 4.5V, ID = 10A
VGS = 10V, ID = 10A
30 48
27 37
Forward Transconductance1
gfs
VDS = 10V, ID = 10A
35 S
DYNAMIC
Input Capacitance
Ciss
1070
Output Capacitance
Coss VGS = 0V, VDS = 25V, f = 1MHz
146
Reverse Transfer Capacitance
Crss
59
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Qg
Qgs
Qgd
VDS = 50V,VGS = 10V,
ID = 10A
24
3.7
8.8
Turn-On Delay Time2
td(on)
30
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDD = 50V,
ID @ 10A, VGS = 10V, RGS = 6Ω
21
45
Fall Time2
tf
21
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = 10A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 10A , dIF/dt= 100A/ms
39
55
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
19
1.2
pF
nC
nS
A
V
nS
nC
REV 1.0
2 2017/1/19



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P3710BTF
N-Channel Enhancement Mode MOSFET
REV 1.0
3 2017/1/19



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P3710BTF
N-Channel Enhancement Mode MOSFET
REV 1.0
4 2017/1/19




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