P3710BT Datasheet PDF - UNIKC


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P3710BT
UNIKC

Part Number P3710BT
Description N-Channel Enhancement Mode MOSFET
Page 8 Pages

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P3710BT
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
37mΩ @VGS = 10V
ID
31A
TO-220
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 100
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
31
20
75
Avalanche Current
Avalanche Energy2
IAS 16
EAS 128
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
78
21
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
1Pulse width limited by maximum junction temperature.
2Starting Tj = 25 °C,L= 1mH,VDD= 50V
SYMBOL
RqJC
TYPICAL
MAXIMUM UNITS
1.6 °C / W
REV 1.0
1 2017/1/16



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P3710BT
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
100
1 1.8
3
V
±100 nA
Zero Gate Voltage Drain Current
IDSS
VDS = 80V , VGS = 0V
VDS = 80V, VGS = 0V , TJ = 125 °C
1
mA
10
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 4.5V, ID = 10A
VGS = 10V, ID = 10A
VDS = 10V, ID = 10A
35 48
27 37
30 S
DYNAMIC
Input Capacitance
Ciss
970
Output Capacitance
Coss VGS = 0V, VDS = 25V, f = 1MHz
129 pF
Reverse Transfer Capacitance
Crss
Total Gate Charge2
Qg
Gate-Source Charge2
Qgs VDS = 50V, ID = 10A, VGS = 10V
Gate-Drain Charge2
Qgd
Turn-On Delay Time2
td(on)
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDD = 50V
ID @ 10A, VGS = 10V, RGS =6Ω
Fall Time2
tf
59
25
4.3 nC
8.3
30
21
nS
45
21
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
Forward Voltage1
IS
VSD IF = 10A, VGS = 0V
31 A
1.2 V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 10A, dlF/dt = 100A / mS
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
36 nS
52 nC
2Independent of operating temperature.
REV 1.0
2 2017/1/16



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P3710BT
N-Channel Enhancement Mode MOSFET
REV 1.0
3 2017/1/16



No Preview Available !

P3710BT
N-Channel Enhancement Mode MOSFET
REV 1.0
4 2017/1/16




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