P3710BD Datasheet PDF - UNIKC

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P3710BD
UNIKC

Part Number P3710BD
Description N-Channel Enhancement Mode MOSFET
Page 8 Pages


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P3710BD
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
37mΩ @VGS = 10V
ID
25A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 100
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
Avalanche Current2
TC = 25 °C
TC = 100 °C
ID
IDM
IAS
25
16
75
16
Avalanche Energy2
EAS 128
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
50
20
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
1Pulse width limited by maximum junction temperature.
2Starting Tj =25 °C,L=1mH,VDD=50V.
SYMBOL
RqJC
TYPICAL
MAXIMUM UNITS
2.5 °C / W
REV 1.3 1 2016/6/2

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