P3606HK Datasheet PDF - NIKO-SEM

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P3606HK
NIKO-SEM

Part Number P3606HK
Description Dual N-Channel Field Effect Transistor
Page 4 Pages


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NIKO-SEM
Dual N-Channel Enhancement Mode P3606HK
Field Effect Transistor
PDFN 5x6P
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
60V 38mΩ
ID
15A
D1 D1 D2 D2
#1 S1 G1 S2 G2
G. GATE
D. DRAIN
S. SOURCE
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Continuous Drain Current
TA = 25 °C
TA = 70 °C
Avalanche Current
Avalanche Energy
L = 0.1mH
Power Dissipation
Power Dissipation
TC = 25 °C
TC = 100 °C
TA = 25 °C
TA = 70 °C
Operating Junction & Storage Temperature Range
VDS
VGS
ID
IDM
ID
IAS
EAS
PD
PD
Tj, Tstg
LIMITS
60
±20
15
10
40
5
4
18.6
17.3
20.8
8
2.3
1.5
-55 to 150
UNITS
V
V
A
mJ
W
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
UNITS
Junction-to-Ambient2
Junction-to-Case
RJA
RJC
55
°C / W
6
1Pulse width limited by maximum junction temperature.
2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
REV 1.0
1
D-49-5

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