P3606HK Datasheet PDF - NIKO-SEM

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P3606HK
NIKO-SEM

Part Number P3606HK
Description Dual N-Channel Field Effect Transistor
Page 4 Pages


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NIKO-SEM
Dual N-Channel Enhancement Mode P3606HK
Field Effect Transistor
PDFN 5x6P
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
60V 38mΩ
ID
15A
D1 D1 D2 D2
#1 S1 G1 S2 G2
G. GATE
D. DRAIN
S. SOURCE
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Continuous Drain Current
TA = 25 °C
TA = 70 °C
Avalanche Current
Avalanche Energy
L = 0.1mH
Power Dissipation
Power Dissipation
TC = 25 °C
TC = 100 °C
TA = 25 °C
TA = 70 °C
Operating Junction & Storage Temperature Range
VDS
VGS
ID
IDM
ID
IAS
EAS
PD
PD
Tj, Tstg
LIMITS
60
±20
15
10
40
5
4
18.6
17.3
20.8
8
2.3
1.5
-55 to 150
UNITS
V
V
A
mJ
W
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
UNITS
Junction-to-Ambient2
Junction-to-Case
RJA
RJC
55
°C / W
6
1Pulse width limited by maximum junction temperature.
2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
REV 1.0
1
D-49-5



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NIKO-SEM
Dual N-Channel Enhancement Mode P3606HK
Field Effect Transistor
PDFN 5x6P
Halogen-Free & Lead-Free
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
LIMITS
UNIT
MIN TYP MAX
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State
Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(ON)
gfs
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
VDS = 0V, VGS = ±20V
VDS = 48V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 55 °C
VGS = 4.5V, ID = 5A
VGS = 10V, ID = 5A
VDS = 5V, ID = 5A
DYNAMIC
60
1.3 1.8
2.3
V
±100 nA
1
A
10
36 47
mΩ
33 38
29 S
Input Capacitance
Output Capacitance
Ciss
Coss
VGS = 0V, VDS = 25V, f = 1MHz
541
75
Reverse Transfer Capacitance
Crss
45
Gate Resistance
Rg VGS = 0V, VDS = 0V, f = 1MHz
1.3
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
VGS = 10V
Qg
VGS = 4.5V
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 30V ,ID = 5A
VDS = 30V ,
ID 5A, VGS = 10V, RGEN =6Ω
13.3
7.7
1.7
4.6
16
10
34
10
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
Forward Voltage1
VSD IF = 5A, VGS = 0V
Reverse Recovery Time
trr
Reverse Recovery Charge
Qrr
1Pulse test : Pulse Width 300 sec, Duty Cycle 2.
2Independent of operating temperature.
IF = 5A, dlF/dt = 100A / S
14.6
5
15
1.3
pF
Ω
nC
nS
A
V
nS
nC
REV 1.0
2
D-49-5



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NIKO-SEM
Dual N-Channel Enhancement Mode P3606HK
Field Effect Transistor
PDFN 5x6P
Halogen-Free & Lead-Free
Output Characteristics
40
VGS=10V
VGS=9V
VGS=8V
32
VGS=7V
VGS=6V
VGS=5V
VGS=4.5V
VGS=4V
24
VGS=3.5V
16
VGS=3V
8
0
01234
VDS, Drain-To-Source Voltage(V)
5
On-Resistance VS Temperature
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-50
VGS=10V
ID=5A
-25 0
25 50 75 100
TJ , Junction Temperature(˚C)
125
150
Gate charge Characteristics
10 Characteristics
VDS=30V
ID=5A
8
6
4
2
0
0 3 6 9 12
Qg , Total Gate Charge(nC)
REV 1.0
15
3
Transfer Characteristics
40
32
24
16
-20
25
8
125
0
01234
VGS, Gate-To-Source Voltage(V)
5
Capacitance Characteristic
700
600
CISS
500
400
300
200
100
0
0
COSS
CRSS
5 10 15 20 25 30
VDS, Drain-To-Source Voltage(V)
Source-Drain Diode Forward Voltage
100
10
150
25
1
0.1
0.0
0.2 0.4 0.6 0.8 1.0 1.2
VSD, Source-To-Drain Voltage(V)
1.4
D-49-5



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NIKO-SEM
Dual N-Channel Enhancement Mode P3606HK
Field Effect Transistor
PDFN 5x6P
Halogen-Free & Lead-Free
Safe Operating Area
100
Operation in This Area
is Limited by RDS(ON)
10
1
0.1 NOTE :
1.VGS= 10V
2.TA=25˚C
3.RθJA = 55˚C/W
4.Single Pulse
0.01
0.1 1 10
VDS, Drain-To-Source Voltage(V)
1ms
10ms
100ms
DC
100
Single Pulse Maximum Power Dissipation
35
30
Single Pulse
RθJA = 55˚C/W
TA55=25˚C
25
20
15
10
5
0
0.001
0.01
0.1
1
Single Pulse Time(s)
10
100
Transient Thermal Response Curve
10
1
Duty cycle=0.5
0.2
0.1
0.1
0.05
0.02
0.01
single pulse
0.01
0.0001
0.001
0.01
0.1
1
T1 , Square Wave Pulse Duration[sec]
Notes
1.Duty cycle, D= t1 / t2
2.RthJA = 55 /W
3.TJ-TA = P*RthJC(t)
4.RthJA(t) = r(t)*RthJC
10 100
REV 1.0
4
D-49-5



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