P3606BK Datasheet PDF - NIKO-SEM

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P3606BK
NIKO-SEM

Part Number P3606BK
Description N-Channel Field Effect Transistor
Page 4 Pages


P3606BK datasheet pdf
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NIKO-SEM
N-Channel Enhancement Mode
Field Effect Transistor
P3606BK
PDFN 5x6P
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
60V 40mΩ
ID
17A
D
G
S
D DDD
#1 S S S G
G. GATE
D. DRAIN
S. SOURCE
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Continuous Drain Current
TA = 25 °C
TA = 70 °C
Avalanche Current
Avalanche Energy
L = 0.1mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Power Dissipation3
TA = 25 °C
TA = 70 °C
Operating Junction & Storage Temperature Range
VDS
VGS
ID
IDM
ID
IAS
EAS
PD
PD
Tj, Tstg
LIMITS
60
±20
17
11
40
6
5
17.8
15.8
27
11
3
2
-55 to 150
UNITS
V
V
A
mJ
W
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM UNITS
Junction-to-Ambient2
Junction-to-Ambient2
t 10s
Steady-State
RJA
RJA
40
70 °C / W
Junction-to-Case
Steady-State
RJC
4.6
1Pulse width limited by maximum junction temperature.
2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
3The Power dissipation is based on RJA t 10s value.
REV 1.0
1
E-47-3



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NIKO-SEM
N-Channel Enhancement Mode
Field Effect Transistor
P3606BK
PDFN 5x6P
Halogen-Free & Lead-Free
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
LIMITS
UNIT
MIN TYP MAX
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State
Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(ON)
gfs
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
VDS = 0V, VGS = ±20V
VDS = 48V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 55 °C
VGS = 4.5V, ID = 6A
VGS = 10V, ID = 6A
VDS = 5V, ID = 6A
DYNAMIC
60
1.3 1.8
2.3
V
±100 nA
1
A
10
35 50
mΩ
32 40
30 S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Ciss
Coss
Crss
Rg
VGS = 0V, VDS = 25V, f = 1MHz
VGS = 0V, VDS = 0V, f = 1MHz
585
77
47
1.5
pF
Ω
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
VGS = 10V
Qg
VGS = 4.5V
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 30V , VGS = 10V,
ID = 6A
VDS = 15V ,
ID 6A, VGS = 10V, RGEN =6Ω
13.4
7.7
1.7
4.8
18
12
33
11
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
nC
nS
Continuous Current
Forward Voltage1
IS
VSD IF = 6A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
IF = 6A, dlF/dt = 100A / S
Qrr
1Pulse test : Pulse Width 300 sec, Duty Cycle 2.
2Independent of operating temperature.
19 A
1.3 V
14 nS
5 nC
REV 1.0
2
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NIKO-SEM
N-Channel Enhancement Mode
Field Effect Transistor
P3606BK
PDFN 5x6P
Halogen-Free & Lead-Free
Output Characteristics
24
VGS=10V
VGS=9V
VGS=8V
20 VGS=7V
VGS=6V
VGS=5V
16 VGS=4.5V
VGS=4V
VGS=3.5V
VGS=3V
12
Transfer Characteristics
24
20
16
12
88
4
0
01234
VDS, Drain-To-Source Voltage(V)
Gate charge Characteristics
10 Characteristics
VDS=30V
ID=6A
8
5
6
4
2
0
0 3 6 9 12 15
Qg , Total Gate Charge(nC)
On-Resistance VS Gate-To-Source
0.06Voltage
0.05
4
12525
-20
0
01234
VGS, Gate-To-Source Voltage(V)
Capacitance Characteristic
700
5
600
CISS
500
400
300
200
100
0
0
COSS
CRSS
5 10 15 20 25
VDS, Drain-To-Source Voltage(V)
On-Resistance VS Drain Current
0.06
0.05
0.04
0.03
0.02
0.01
0
2
ID=6A
468
VGS, Gate-To-Source Voltage(V)
10
0.04
0.03
0.02
0.01
0
0
VGS=4.5V
VGS=10V
3 6 9 12
ID , Drain-To-Source Current(A)
15
REV 1.0
3
E-47-3



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NIKO-SEM
N-Channel Enhancement Mode
Field Effect Transistor
P3606BK
PDFN 5x6P
Halogen-Free & Lead-Free
On-Resistance VS Temperature
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-50
100
VGS=10V
ID=6A
-25 0
25 50 75 100
TJ , Junction Temperature(˚C)
Safe Operating Area
125
Operation in This Area
is Limited by RDS(ON)
10
150
Source-Drain Diode Forward Voltage
100
10
150
25
1
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD, Source-To-Drain Voltage(V)
Single Pulse Maximum Power Dissipation
30
Single Pulse
25 RθJA = 70˚C/W
TA=25˚C
20
1
NOTE :
0.1 1.VGS= 10V
2.TA=25˚C
3.RθJA = 70˚C/W
4.Single Pulse
0.01
0.1
1 10
VDS, Drain-To-Source Voltage(V)
1ms
10ms
100ms
DC
100
15
10
5
0
0.001
0.01
0.1
1
10
Single Pulse Time(s)
Transient Thermal Response Curve
10
Duty cycle=0.5
0.2
0.1
0.05
0.02
1 0.01
100
REV 1.0
0.1
single pulse
0.01
0.0001
0.001
0.01
0.1
1
T1 , Square Wave Pulse Duration[sec]
4
Notes
1.Duty cycle, D= t1 / t2
2.RthJA = 70 /W
3.TJ-TA = P*RthJA(t)
4.RthJA(t) = r(t)*RthJA
10 100
E-47-3



P3606BK datasheet pdf
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P3606BK pdf
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