P3606BD Datasheet PDF - UNIKC

www.Datasheet-PDF.com

P3606BD
UNIKC

Part Number P3606BD
Description N-Channel Enhancement Mode MOSFET
Page 5 Pages


P3606BD datasheet pdf
Download PDF for PC
P3606BD pdf
View PDF for Mobile


No Preview Available !

P3606BD
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
60V 36mΩ @VGS = 10V
ID
22A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 60
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC= 25 °C
TC= 100 °C
ID
IDM
22
14
45
Avalanche Current
IAS 18
Avalanche Energy
L=0.1mH
EAS
16
Power Dissipation
TC= 25 °C
TC= 100°C
PD
39
15.6
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
3.2
62.5
UNITS
°C / W
REV 1.0
1 2014/12/4

P3606BD datasheet pdf
Download PDF for PC
P3606BD pdf
View PDF for Mobile


Related : Start with P3606B Part Numbers by
P3606BD N-Channel Enhancement Mode MOSFET P3606BD
UNIKC
P3606BD pdf
P3606BK N-Channel Field Effect Transistor P3606BK
NIKO-SEM
P3606BK pdf

Index :   0   1   2   3   4   5   6   7   8   9   A   B   C   D   E   F   G   H   I   J   K   L   M   N   O   P   Q   R   S   T   U   V   W   X   Y   Z   NEW   

Since 2010   ::   HOME   ::   Contact