P3506DT Datasheet PDF - NIKO-SEM

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P3506DT
NIKO-SEM

Part Number P3506DT
Description P-Channel Logic Level Enhancement Mode Field Effect Transistor
Page 4 Pages


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NIKO-SEM P-Channel Logic Level Enhancement Mode P3506DT
Field Effect Transistor
TO-220
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-60V
35mΩ
ID
-40A
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
Avalanche Current
Avalanche Energy 2
Power Dissipation
Junction & Storage Temperature Range
TC = 25 °C
TC = 100 °C
L = 0.1mH
Tc = 25 °C
Tc = 100 °C
VDS
VGS
ID
IDM
IAS
EAS
PD
TJ, Tstg
1. GATE
2. DRAIN
3. SOURCE
LIMITS
-60
±20
-40
-25
-150
-40
80
104
41
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RθJc
Junction-to-Ambient
RθJA
1Pulse width limited by maximum junction temperature.
2VDD = -30V . Starting TJ = 25˚C.
TYPICAL
MAXIMUM
1.2
40
UNITS
°C / W
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State
Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(ON)
gfs
STATIC
VGS = 0V, ID = 250µA
VDS = VGS, ID = 250µA
VDS = 0V, VGS = ±20V
VDS = -48V, VGS = 0V
VDS = -40V, VGS = 0V, TJ = 55 °C
VGS = -7V, ID = -20A
VGS = -10V, ID = -25A
VDS = -5V, ID = -25A
LIMITS
UNIT
MIN TYP MAX
-60
-2 -2.7 -4
V
±100 nA
1
µA
10
34 55
mΩ
29 35
30 S
REV 1.0
Mar-01-2011
1

P3506DT datasheet pdf
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