P3506DT Datasheet PDF - NIKO-SEM

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P3506DT
NIKO-SEM

Part Number P3506DT
Description P-Channel Logic Level Enhancement Mode Field Effect Transistor
Page 4 Pages


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NIKO-SEM P-Channel Logic Level Enhancement Mode P3506DT
Field Effect Transistor
TO-220
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-60V
35mΩ
ID
-40A
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
Avalanche Current
Avalanche Energy 2
Power Dissipation
Junction & Storage Temperature Range
TC = 25 °C
TC = 100 °C
L = 0.1mH
Tc = 25 °C
Tc = 100 °C
VDS
VGS
ID
IDM
IAS
EAS
PD
TJ, Tstg
1. GATE
2. DRAIN
3. SOURCE
LIMITS
-60
±20
-40
-25
-150
-40
80
104
41
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RθJc
Junction-to-Ambient
RθJA
1Pulse width limited by maximum junction temperature.
2VDD = -30V . Starting TJ = 25˚C.
TYPICAL
MAXIMUM
1.2
40
UNITS
°C / W
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State
Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(ON)
gfs
STATIC
VGS = 0V, ID = 250µA
VDS = VGS, ID = 250µA
VDS = 0V, VGS = ±20V
VDS = -48V, VGS = 0V
VDS = -40V, VGS = 0V, TJ = 55 °C
VGS = -7V, ID = -20A
VGS = -10V, ID = -25A
VDS = -5V, ID = -25A
LIMITS
UNIT
MIN TYP MAX
-60
-2 -2.7 -4
V
±100 nA
1
µA
10
34 55
mΩ
29 35
30 S
REV 1.0
Mar-01-2011
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NIKO-SEM P-Channel Logic Level Enhancement Mode P3506DT
Field Effect Transistor
TO-220
Halogen-Free & Lead-Free
On-State Drain Current1
ID(ON)
VDS = -5V, VGS = -10V,
-150
DYNAMIC
Input Capacitance
Output Capacitance
Ciss
Coss VGS = 0V, VDS = -30V, f = 1MHz
2590
260
Reverse Transfer Capacitance
Crss
150
Gate Resistance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS =0V, VDS = 0V, f = 1MHz
VDS = 0.5V(BR)DSS, VGS = -10V,
ID =-25A
VDS = -30V , RL = 1Ω
ID -20A, VGS = -10V, RGEN =6Ω
4.8
38.6
13.6
8.8
30
90
70
15
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
Forward Voltage1
IS
VSD IF = -25A, VGS = 0V
-40
-1.3
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr IF = -25A, dlF/dt = 100A / µS
1Pulse test : Pulse Width 300 µsec, Duty Cycle 2%.
2Independent of operating temperature.
38
48
A
pF
Ω
nC
nS
A
V
nS
nC
REMARK: THE PRODUCT MARKED WITH “P3506DT”, DATE CODE or LOT #
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NIKO-SEM P-Channel Logic Level Enhancement Mode P3506DT
Field Effect Transistor
TO-220
Halogen-Free & Lead-Free
Output Characteristics
50
VGS=-10V
VGS=-9 V
40 VGS=-8 V
VGS=-7 V
VGS = -6V
30
20
VGS = -5V
10
VGS= -4.5V
0
012 345
-VDS, Drain-To-Source Voltage(V)
On-Resistance VS Gate-To-Source
500
450
400
350
300
250
200
150
100
ID= -25A
50
0
5 67 89
-VGS, Gate-To-Source Voltage(V)
10
Transfer Characteristics
50
40
30
20
10
0
2
125
25
-20
3 456
-VGS, Gate-To-Source Voltage(V)
7
On-Resistance VS Drain Current
0.16
0.14
0.12
0.10
VGS = -5V
0.08
0.06
0.04
0.02
0
0
VGS = -7V
VGS = -10V
15 30 45 60
-ID , Drain-To-Source Current
75
On-Resistance VS Temperature
2.0
1.8
1.6
1.4
1.2
1.0
0.8
VGS=-10V
0.6 ID=-25A
0.4
-50
-25
0 25 50 75 100 125 150
TJ , Junction Temperature(˚C)
Gate charge Characteristics
10 Characteristics
8
ID= -25A
VDS= -30V
6
4
2
0
0 10 20 30 40
Qg , Total Gate Charge (pF)
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NIKO-SEM P-Channel Logic Level Enhancement Mode P3506DT
Field Effect Transistor
TO-220
Halogen-Free & Lead-Free
Capacitance Characteristic
Body Diode Forward Voltage VS Source current
1.0E+03
1.0E+02
1.0E+01
TJ =150° C
1.0E+00
1.0E-01
TJ =25° C
1.0E-02
1.0E-03
-VDS, Drain-To-Source Voltage (V)
1.0E-04
0.1 0.3
0.5 0.7 0.9 1.1
-VSD, Source-To-Drain Voltage (V)
1.3
1000 Safe Operating Area
Operation in This
Area is Limited by
RDS(ON)
100
10
100us
Single Pulse Maximum Power Dissipation
1000
800 SINGLE PULSE
RθJC = 1.2˚ C/W
TC=25˚ C
600
1m s
1 NOTE :
1.VGS= 10V
2.TC=25˚ C
3.RθJC = 2.5˚ C/W
4.Single Pulse
10m s
DC
0.1
1 10 100
-VDS, Drain-To-Source Voltage (V)
400
200
0
0.0001
0.001Single0.P01ulse Tim0.e1 (s)
1
10
1.00E+01
Transient Thermal Response Curve
1.00E+00
Duty Cycle =0.5
0.1
1.00E-01
0.2
0.05
0.02
0.01
single Pluse
1.00E-02
1.E-05
1.E-04
1.E-03
1.E-02
T1 , Square Wave Pulse Duration [sec]
Note
1.Duty cycle, D= t1 / t2
2.RthJC = 1.2 oC/W
3.TJ-TC = P*RthJC(t)
4.RthJC(t) = r(t)*RthJC
1.E-01
1.E+00
REV 1.0
Mar-01-2011
4



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