P3202CMG Datasheet PDF - NIKO-SEM


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P3202CMG
NIKO-SEM

Part Number P3202CMG
Description N-Channel Enhancement Mode Field Effect Transistor
Page 4 Pages

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NIKO-SEM
N-Channel Enhancement Mode P3202CMG
Field Effect Transistor
SOT-23
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
20 32mΩ
ID
5A
D
G
S
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
Power Dissipation
TA = 25 °C
TA = 70 °C
Operating Junction & Storage Temperature Range
Lead Temperature (1/16” from case for 10 sec.)
VGS
ID
IDM
PD
Tj, Tstg
TL
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Ambient
RθJA
1Pulse width limited by maximum junction temperature.
TYPICAL
75
1. GATE
2. DRAIN
3. SOURCE
LIMITS
±12
5
4
30
1.25
0.8
-55 to 150
275
UNITS
V
A
W
°C
MAXIMUM
100
UNITS
°C/W
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current1
Drain-Source On-State
Resistance1
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(ON)
RDS(ON)
STATIC
VGS = 0V, ID = 250μA
VDS = VGS, ID = 250μA
VDS = 0V, VGS = ±12V
VDS = 16V, VGS = 0V
VDS = 16V, VGS = 0V, TJ = 70 °C
VDS = 10V, VGS = 10V
VGS = 1.8V, ID = 2A
VGS = 2.5V, ID = 4A
VGS = 4.5V, ID = 5A
LIMITS
MIN TYP MAX
UNIT
20
0.45 0.75 1.2
V
±100 nA
1
μA
10
5A
57 80
mΩ
38 50
27 32
REV 1.0
04-Feb-2009
1



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NIKO-SEM
N-Channel Enhancement Mode P3202CMG
Field Effect Transistor
SOT-23
Halogen-Free & Lead-Free
Forward Transconductance1
DYNAMIC
gfs
VDS = 5V, ID = 5A
Input Capacitance
Output Capacitance
Ciss
Coss VGS = 0V, VDS = 10V, f = 1MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge2
Qg
Gate-Source Charge2
Qgs VDS = 0.5V(BR)DSS, VGS =4.5V,
Gate-Drain Charge2
Qgd ID = 5A
Turn-On Delay Time2
td(on)
Rise Time2
tr VDD = 10V,
Turn-Off Delay Time2
td(off)
ID 1A, VGEN = 4.5V, RG = 0.2Ω
Fall Time2
tf
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD
1Pulse test : Pulse Width 300 μsec, Duty Cycle 2.
2Independent of operating temperature.
IF = IS, VGS = 0V
12 S
740
90
66
8 12
3.6
2
8 14
6 12
19 45
7 23
pF
nC
nS
1A
1.3 V
REMARK: THE PRODUCT MARKED WITH “15YWW”, DATE CODE or LOT #
REV 1.0
04-Feb-2009
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NIKO-SEM
N-Channel Enhancement Mode P3202CMG
Field Effect Transistor
SOT-23
Halogen-Free & Lead-Free
Output Characteristics
20
VGS=4.5V
2.5V
16 3.0V
20 Transfer Characteristics
VDS= 5V
16
TA=-55°C
125°C
12
1.8V
8
4
1.5V
0
0 0.5 1 1.5 2 2.5
VDS, Drain-To-Source Voltage(V)
3
On-Resistance VS Temperature
1.6
ID=5A
VGS= 4.5V
1.4
1.2
1
0.8
0.6
-50 -25 0 25 50 75 100 125
TJ , Junction Temperature(˚C)
Gate charge Characteristics
5
ID=5A
VDS=10V
4
VDS=5V
150
3
2
1
0
0 2 4 6 8 10
Qg , Total Gate Charge
12
25°C
8
2
0
0.5
1 1.5 2 2.5
VGS, Gate-To-Source Voltage(V)
Capacitance Characteristic
3
1100
f =1MHz
VGS=0 V
900
Ciss
700
500
300
100 Coss
Crss
0
0 4 8 12 16 20
VDS, Drain-To-Source Voltage(V)
Source-Drain Diode Forward Voltage
1.0E+03
1.0E+02
1.0E+01
TJ =150° C
1.0E+00
1.0E-01
1.0E-02
TJ =25°C
1.0E-03
1.0E-04
0.1
0.3 0.5 0.7 0.9 1.1
VSD, Source-To-Drain Voltage(V)
1.3
REV 1.0
04-Feb-2009
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NIKO-SEM
N-Channel Enhancement Mode P3202CMG
Field Effect Transistor
SOT-23
Halogen-Free & Lead-Free
Safe Operating Area
100
Operation in This Area
is Lim ited by RDS(ON)
10
1ms
1 10m s
100m s
0.1
0.01
0.1
NOTE :
1.VGS= 10V
2.TA=25° C
3.RθJA = 100° C/W
4.Single Pulse
1S
10S
DC
1 10
VDS, Drain-To-Source Voltage(V)
Single Pulse Maximum Power Dissipation
150
SINGLE PULSE
120
RθJA = 100° C/W
TA=25° C
90
60
30
0
100 0.001
0.01
0.1
1
Single Pulse Time(s)
10
Transient Thermal Response Curve
1
D=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01 SinglePulse
0.001
0.0001
0.001 0.01
0.1
1
T1 , Square Wave Pulse Duration[sec]
1.RθJA(t) =r(t)*RθJA
2.RθJA=100°C/W
t1
t2
3.TJ-TA=P*RθJA(t)
4.DutyCycle, D=t1/ t2
10 100 300
REV 1.0
04-Feb-2009
4




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