P2806AT Datasheet PDF - UNIKC

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P2806AT
UNIKC

Part Number P2806AT
Description N-Channel Enhancement Mode MOSFET
Page 5 Pages


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P2806AT
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
60V 30mΩ @VGS = 10V
ID
34A
TO-220
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
34
21
110
Avalanche Current
IAS 29
Avalanche Energy
L = 0.1mH
EAS
41
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
58
23
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
2.15
62.5
UNITS
°C / W
Ver 1.0
1 2012/4/13



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P2806AT
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current1
Drain-Source On-State
RFoerswisatradncTera1 nsconductance1
ID(ON)
RDS(ON)
gfs
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
VDS = 48V, VGS = 0V
VDS = 40V, VGS = 0V , TJ = 125 °C
VDS = 5V, VGS = 10V
VGS = 10V, ID = 25A
VDS = 5V, ID = 25A
60
1.8 2.4 4.0
±250
1
10
110
26 30
25
DYNAMIC
Input Capacitance
Ciss
Output Capacitance
Coss VGS = 0V, VDS = 25V, f = 1MHz
Reverse Transfer Capacitance
Crss
1240
173
97
Gate Resistance
Rg VGS = 0V, VDS = 0V, f = 1MHz
1.7
Total Gate Charge2
Qg
21
Gate-Source Charge2
Qgs VDS = 30V, VGS = 10V, ID = 25A
7
Gate-Drain Charge2
Qgd
5
Turn-On Delay Time2
td(on)
10
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDS = 0.5V(BR)DSS, RL = 1.5Ω
ID @ 20A, VGS = 10V, RG = 5.6Ω
145
28
Fall Time2
tf
77
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = 25A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = IS, dlF/dt = 100A / μS
40
48
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
34
1.3
UNIT
V
nA
mA
A
mΩ
S
pF
Ω
nC
nS
A
V
nS
nC
Ver 1.0
2 2012/4/13



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P2806AT
N-Channel Enhancement Mode MOSFET
Ver 1.0
3 2012/4/13



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P2806AT
N-Channel Enhancement Mode MOSFET
Ver 1.0
4 2012/4/13



P2806AT datasheet pdf
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P2806AT pdf
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