P2806AT Datasheet PDF - NIKO-SEM

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P2806AT
NIKO-SEM

Part Number P2806AT
Description N-Channel Enhancement Mode Field Effect Transistor
Page 4 Pages


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NIKO-SEM
N-Channel Enhancement Mode
P2806AT
Field Effect Transistor
TO-220
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
60V 30mΩ
ID
34A
D
G
1. GATE
2. DRAIN
3. SOURCE
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
L = 0.1mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
IAS
EAS
PD
Tj, Tstg
LIMITS
±20
34
21
110
29
41
58
23
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RθJC
Junction-to-Ambient
RθJA
1Pulse width limited by maximum junction temperature.
TYPICAL
MAXIMUM
2.15
62.5
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current1
Drain-Source On-State
Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(ON)
RDS(ON)
gfs
STATIC
VGS = 0V, ID = 250µA
VDS = VGS, ID = 250µA
VDS = 0V, VGS = ±20V
VDS = 48V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 125 °C
VDS = 5V, VGS = 10V
VGS = 10V, ID = 25A
VDS = 5V, ID = 25A
LIMITS
UNIT
MIN TYP MAX
60
1.8 2.4
4
V
±250 nA
1
µA
10
110 A
26 30 mΩ
25 S
REV 1.0
Sep-30-2010
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NIKO-SEM
N-Channel Enhancement Mode
P2806AT
Field Effect Transistor
TO-220
Halogen-Free & Lead-Free
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = 25V, f = 1MHz
VGS = 0V, VDS = 0V, f = 1MHz
VDS =30V, VGS = 10V,
ID = 25A
VDS = 0.5V(BR)DSS, RL = 1.5Ω
ID 20A, VGS = 10V, RG = 5.6 Ω
1240
173
97
1.7
21
7
5
10
145
28
77
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
Forward Voltage1
IS
VSD IF = 25A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
IF = IS, dlF/dt = 100A / µS
Qrr
1Pulse test : Pulse Width 300 µsec, Duty Cycle 2.
2Independent of operating temperature.
40
48
34
1.3
pF
Ω
nC
nS
A
V
nS
nC
REV 1.0
Sep-30-2010
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NIKO-SEM
N-Channel Enhancement Mode
P2806AT
Field Effect Transistor
TO-220
Halogen-Free & Lead-Free
Output Characteristics
100 VGS = 10V
Transfer Characteristics
100
80 80
60 60
40
VGS = 7V
20
VGS = 5V
0
0 12 3 4
VDS, Drain-To-Source Voltage(V)
On-Resistance VS Temperature
RDS(ON) 2.0
5
RDS(ON) 1.8
RDS(ON) 1.6
RDS(ON) 1.4
RDS(ON) 1.2
RDS(ON) 1.0
RDS(ON) 0.8
RDS(ON)
RDS(ON)
10
0.6 VGS=10V
ID=25A
0.4
-50 -25 0 25 50 75 100 125 150
TJ , Junction Temperature(˚C)
Gate charge Characteristics
Characteristics
8
ID=25A
VDS=30V
6
4
2
0
0 5 10 15 20
Qg , Total Gate Charge
40
TJ=125° C
20 TJ=25°C
TJ=-20° C
0
2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0
VGS, Gate-To-Source Voltage(V)
Capacitance Characteristic
2.00E+03
10.0
1.50E+03
1.00E+03
Cis s
5.00E+02
0.00E+00
0
Cos s
Cr s s
5 10 15 20 25
VDS, Drain-To-Source Voltage(V)
30
Source-Drain Diode Forward Voltage
1.0E+03
1.0E+02
1.0E+01
TJ =150° C
1.0E+00
1.0E-01
TJ =25° C
1.0E-02
1.0E-03
1.0E-04
0.2 0.4
0.6 0.8 1.0 1.2
VSD, Source-To-Drain Voltage(V)
1.4
REV 1.0
Sep-30-2010
3



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NIKO-SEM
N-Channel Enhancement Mode
P2806AT
Field Effect Transistor
TO-220
Halogen-Free & Lead-Free
Safe Operating Area
1000
100
Operation in This
Area is Limited
by RDS(ON)
10
1 NOTE :
1.VGS= 10V
2.TC=25˚ C
3.RθJC = 2.15˚ C/W
4.Single Pulse
0.1
1 10
VDS, Drain-To-Source Voltage(V)
Single Pulse Maximum Power Dissipation
500
400
100us
1m s
10m s
DC
300
200
100
SINGLE PULSE
RθJC = 2.15˚ C/W
TC=25˚ C
0
100
0.0001
0.001
0.01
0.1
1
10
Single Pulse Time(s)
1.00E+01
Transient Thermal Response Curve
1.00E+00
Duty Cycle=0.5
1.00E-01
0.1
0.2
0.05
0.02
0.01
single Pluse
1.00E-02
1.E-05
1.E-04
1.E-03
1.E-02
T1 , Square Wave Pulse Duration[sec]
Note
1.Duty cycle, D= t1 / t2
2.RthJC = 2.15 oC/W
3.TJ-TC = P*RthJC(t)
4.RthJC(t) = r(t)*RthJC
1.E-01
1.E+00
REV 1.0
Sep-30-2010
4



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