P2710AD Datasheet PDF - UNIKC

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P2710AD
UNIKC

Part Number P2710AD
Description N-Channel Enhancement Mode MOSFET
Page 5 Pages


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P2710AD
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
32mΩ @VGS = 10V
ID
34A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 100
Gate-Source Voltage
VGS ±20
Continuous Drain Current1
Pulsed Drain Current2
TC = 25 °C
TC = 100 °C
ID
IDM
34
22
100
Avalanche Current
IAS 50
Avalanche Energy
L = 0.1mH
EAS
125
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
83
33
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
2Limited by package
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
1.8
62.5
UNITS
°C / W
REV 1.2
1 2014-2-26



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P2710AD
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
100
1.8 2.8 4.0
±250
Zero Gate Voltage Drain Current
On-State Drain Current1
IDSS
ID(ON)
VDS = 80V, VGS = 0V
VDS = 80V, VGS = 0V , TJ = 125 °C
VDS = 10V, VGS = 10V
100
1
10
Drain-Source On-State
Resistance1
RDS(ON)
VGS = 10V, ID = 25A
25 32
Forward Transconductance1
gfs
VDS = 5V, ID = 25A
30
DYNAMIC
Input Capacitance
Ciss
2700
Output Capacitance
Coss VGS = 0V, VDS = 25V, f = 1MHz
307
Reverse Transfer Capacitance
Crss
Total Gate Charge2
Qg
Gate-Source Charge2
Qgs VDS = 50V, VGS = 10V, ID = 25A
Gate-Drain Charge2
Qgd
205
54
16
23
Gate Resistance
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Rg
td(on)
tr
td(off)
tf
VGS = 0V, VDS = 0V, f = 1MHz
VDS = 50V,
ID @ 25A, VGS = 10V, RGEN = 6Ω
2.5
10
10
15
10
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = 25A, VGS = 0V
34
1.2
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 25A, dlF/dt = 100A / μS
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
62
175
2Independent of operating temperature.
UNIT
V
nA
mA
A
S
pF
nC
Ω
nS
A
V
nS
nC
REV 1.2
2 2014-2-26



No Preview Available !

P2710AD
N-Channel Enhancement Mode MOSFET
REV 1.2
3 2014-2-26



No Preview Available !

P2710AD
N-Channel Enhancement Mode MOSFET
REV 1.2
4 2014-2-26



P2710AD datasheet pdf
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P2710AD pdf
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