P2710AD Datasheet PDF - UNIKC

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P2710AD
UNIKC

Part Number P2710AD
Description N-Channel Enhancement Mode MOSFET
Page 5 Pages


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P2710AD
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
32mΩ @VGS = 10V
ID
34A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 100
Gate-Source Voltage
VGS ±20
Continuous Drain Current1
Pulsed Drain Current2
TC = 25 °C
TC = 100 °C
ID
IDM
34
22
100
Avalanche Current
IAS 50
Avalanche Energy
L = 0.1mH
EAS
125
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
83
33
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
2Limited by package
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
1.8
62.5
UNITS
°C / W
REV 1.2
1 2014-2-26

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P2710AD N-Channel Enhancement Mode MOSFET P2710AD
UNIKC
P2710AD pdf

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