P2615ATG Datasheet PDF - UNIKC

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P2615ATG
UNIKC

Part Number P2615ATG
Description N-Channel Enhancement Mode MOSFET
Page 5 Pages


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P2615ATG
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
150V
26mΩ @VGS = 10V
ID
53A
TO-220 100% UIS tested
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±30
Continuous Drain Current
Pulsed Drain Current1
Avalanche Current
TC= 25 °C
TC= 100 °C
ID
IDM
IAS
53
34
160
37
Avalanche Energy
L = 0.3 mH
EAS
210
Power Dissipation
TC= 25 °C
TC= 100°C
Operating Junction & Storage Temperature Range
PD
Tj, Tstg
178
71
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
0.7
62.5
UNITS
°C / W
REV 1.1
1 2014/5/28



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P2615ATG
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current1
Drain-Source On-State
Resistance1
ID(ON)
RDS(ON)
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±30V
VDS =120V, VGS = 0V
VDS =100V, VGS = 0V, TJ = 125°C
VDS = 10V, VGS = 10V
VGS =10V, ID = 20A
150
2 2.7
4
V
±100 nA
1
mA
10
160 A
24 26
Forward Transconductance1
gfs
VDS =15V, ID =20A
27 S
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = 25V, f = 1MHz
VDS =75V, VGS = 10V,
ID = 20A
VDD = 75V
ID @ 20A, VGS= 10V, RGEN =25Ω
7000
381
336
136
40
47
15
30
42
31
pF
nC
nS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = 20A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 20A, dlF/dt = 100A / μS
100
252
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
53
1.3
A
V
nS
nC
REV 1.1
2 2014/5/28



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P2615ATG
N-Channel Enhancement Mode MOSFET
REV 1.1
3 2014/5/28



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P2615ATG
N-Channel Enhancement Mode MOSFET
REV 1.1
4 2014/5/28



P2615ATG datasheet pdf
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P2615ATG pdf
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