P2610BTF Datasheet PDF - NIKO-SEM

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P2610BTF
NIKO-SEM

Part Number P2610BTF
Description N-Channel Field Effect Transistor
Page 4 Pages


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NIKO-SEM
N-Channel Enhancement Mode
P2610BTF
Field Effect Transistor
TO-220F
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
26.8mΩ
ID
24A
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
Avalanche Current
Avalanche Energy
Power Dissipation
Junction & Storage Temperature Range
TC = 25 ° C
TC = 100 ° C
L = 0.1mH
TC = 25 ° C
TC = 100 ° C
VDS
VGS
ID
IDM
IAS
EAS
PD
TJ, Tstg
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Ambient
RJA
Junction-to-Case
RJC
1Pulse width limited by maximum junction temperature.
TYPICAL
1: GATE
2: DRAIN
3: SOURCE
LIMITS
100
±20
24
15
70
11.7
6.9
37.9
15
-55 to 150
UNITS
V
V
A
mJ
W
°C
MAXIMUM
62.5
3.3
UNITS
°C /W
.ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
LIMITS
UNIT
MIN TYP MAX
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State
Resistance1
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(ON)
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
100
1.3 1.8 2.3
V
VDS = 0V, VGS = ±20V
±100 nA
VDS = 80V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 125 ° C
1 A
10
VGS = 4.5V, ID = 10A
VGS =10V, ID = 10A
23.3 35
mΩ
19.3 26.8
REV 1.0
1
D-45-5



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NIKO-SEM
N-Channel Enhancement Mode
P2610BTF
Field Effect Transistor
TO-220F
Halogen-Free & Lead-Free
Forward Transconductance1
gfs VDS = 5V, ID = 10A
DYNAMIC
50
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Ciss
Coss
Crss
Rg
VGS = 0V, VDS = 25V, f = 1MHz
VGS = 0V, VDS = 0V, f = 1MHz
1900
149
92
0.8
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Qg(VGS=10V)
Qg(VGS=4.5V)
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 50V , ID =10A
VDS = 50V , ID 10A,
VGS = 10V, RGEN =6Ω
41.5
22.4
6
11.6
16
45
47
38
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C)
Continuous Current
Forward Voltage1
IS
VSD IF = 10A, VGS = 0V
Diode Reverse Recovery Time
trr
Diode Reverse Recovery Charge
Qrr
1Pulse test : Pulse Width 300 sec, Duty Cycle 2%.
2Independent of operating temperature.
IF= 10A, dI/dt=100A/μs
32
36
24
1.2
S
pF
Ω
nC
nS
A
V
nS
nC
REV 1.0
2
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NIKO-SEM
N-Channel Enhancement Mode
P2610BTF
Field Effect Transistor
TO-220F
Halogen-Free & Lead-Free
Output Characteristics
40
VGS=10V
VGS=9V
VGS=8V
32
VGS=7V
VGS=6V
VGS=5V
VGS=4.5V
VGS=3.5V
24
VGS=3V
16
8
Transfer Characteristics
40
32
24
125
16
25
-20
8
0
01234
VDS, Drain-To-Source Voltage(V)
On-Resistance VS Temperature
2.7
5
0
01234
VGS, Gate-To-Source Voltage(V)
Capacitance Characteristic
2500
5
2.2 2000
CISS
1.7 1500
1.2 1000
0.7
VGS=10V
ID=10A
0.2
-50 -25 0 25 50 75 100 125 150
TJ , Junction Temperature(˚C)
Gate charge Characteristics
10 Characteristics
VDS=50V
ID=10A
8
6
500
COSS
0 CRSS
0 5 10 15 20 25 30
VDS, Drain-To-Source Voltage(V)
Source-Drain Diode Forward Voltage
100
150
25
10
4
1
2
0
0 9 18 27 36
Qg , Total Gate Charge(nC)
45
0.1
0.0
0.2 0.4 0.6 0.8 1.0
VSD, Source-To-Drain Voltage(V)
1.2
REV 1.0
3
D-45-5



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NIKO-SEM
N-Channel Enhancement Mode
P2610BTF
Field Effect Transistor
TO-220F
Halogen-Free & Lead-Free
Safe Operating Area
100
Operation in This Area
is Limited by RDS(ON)
10
1
NOTE :
1.VGS= 10V
2.TC=25˚C
3.RθJC = 3.3˚C/W
4.Single Pulse
1ms
10ms
100ms
DC
0.1
1
10 100
VDS, Drain-To-Source Voltage(V)
Single Pulse Maximum Power Dissipation
140
120
Single Pulse
RθJC = 3.3˚C/W
TC=25˚C
100
80
60
40
20
0
0.001
0.01
0.1
1
Single Pulse Time(s)
10
100
Transient Thermal Response Curve
10
1
Duty cycle=0.5
0.2
0.1
0.1
0.05
0.02
0.01
single pulse
0.01
0.0001
0.001
0.01
0.1
1
T1 , Square Wave Pulse Duration[sec]
Notes
1.Duty cycle, D= t1 / t2
2.RthJC = 3.3 /W
3.TJ-TC = P*RthJC(t)
4.RthJC(t) = r(t)*RthJC
10 100
REV 1.0
4
D-45-5



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