P2610BD Datasheet PDF - UNIKC

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P2610BD
UNIKC

Part Number P2610BD
Description N-Channel Enhancement Mode MOSFET
Page 8 Pages


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P2610BD
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
26.8mΩ @VGS = 10V
ID
36A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 100
Gate-Source Voltage
VGS ±20
Continuous Drain Current2
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
36
23
80
Avalanche Current
IAS 13.9
Avalanche Energy
L =0.1mH
EAS
9.7
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
78
31
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
Junction-to-Case
RqJC
Junction-to-Ambient
RqJA
1Pulse width limited by maximum junction temperature.
2Calculated continuous current based on maximum allowable junction temperature.
MAXIMUM
1.6
62.5
UNITS
°C / W
REV 1.2 1 2016/6/6

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