P2610ATG Datasheet PDF - UNIKC

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P2610ATG
UNIKC

Part Number P2610ATG
Description N-Channel Enhancement Mode MOSFET
Page 4 Pages


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P2610ATG
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
26mΩ @VGS = 10V
ID
50A
TO-220
100% UIS tested
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
Avalanche Current
Avalanche Energy
Power Dissipation
TC = 25 °C
TC = 100 °C
L = 0.3mH
TC = 25 °C
TC = 100 °C
VGS
ID
IDM
IAS
EAS
PD
±20
50
31
200
77
900
128
51
Operating Junction & Storage Temperature Range
Lead Temperature ( 1/16" from case for 10 sec.)
TJ, TSTG
TL
-55 to 150
275
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
Case-to-Heatsink
1Pulse width limited by maximum junction temperature.
SYMBOL
RθJC
RθJA
RθCS
TYPICAL
0.5
MAXIMUM UNITS
0.97
62.5
°C / W
Ver 1.0
1 2011/4/8

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