P2610ADG Datasheet PDF - UNIKC

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P2610ADG
UNIKC

Part Number P2610ADG
Description N-Channel Enhancement Mode MOSFET
Page 5 Pages


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P2610ADG
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
26mΩ @VGS = 10V
ID
50A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 100
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
50
35.5
150
Avalanche Current
IAS 53
Avalanche Energy
L = 0.1mH
EAS
140
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
128
51
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
0.97
62.5
UNITS
°C / W
Ver 1.1
1 2013-3-22



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P2610ADG
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
100
1.7 2.5 3.4
±250
Zero Gate Voltage Drain Current
IDSS
VDS = 80V, VGS = 0V
VDS = 80V, VGS = 0V , TJ = 125 °C
On-State Drain Current1
ID(ON)
VDS = 10V, VGS = 10V
150
Drain-Source On-State
RFoerswisatradncTera1 nsconductance1
RDS(ON)
gfs
VGS = 10V, ID = 25A
VDS = 40V, ID = 25A
21
38
1
10
26
DYNAMIC
Input Capacitance
Ciss
5000
Output Capacitance
Coss VGS = 0V, VDS = 25V, f = 1MHz
285
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Crss
Qg
Qgs VDS = 80V, VGS = 10V, ID = 27.5A
Qgd
189
80
28
23
Gate Resistance
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Rg
td(on)
tr
td(off)
tf
VGS = 15mV, VDS = 0V, f = 1MHz
VDD = 50V,
ID @ 25A, VGS = 10V, RGS = 25Ω
2
25
250
110
140
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
Forward Voltage1
IS
VSD IF = 25A, VGS = 0V
50
1.5
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 25A, dlF/dt = 100A / μS
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
100
380
2Independent of operating temperature.
UNIT
V
nA
mA
A
S
pF
nC
Ω
nS
A
V
nS
nC
Ver 1.1
2 2013-3-22



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P2610ADG
N-Channel Enhancement Mode MOSFET
Ver 1.1
3 2013-3-22



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P2610ADG
N-Channel Enhancement Mode MOSFET
Ver 1.1
4 2013-3-22



P2610ADG datasheet pdf
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P2610ADG pdf
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