P2610ADG Datasheet PDF - UNIKC

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P2610ADG
UNIKC

Part Number P2610ADG
Description N-Channel Enhancement Mode MOSFET
Page 5 Pages


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P2610ADG
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
26mΩ @VGS = 10V
ID
50A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 100
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
50
35.5
150
Avalanche Current
IAS 53
Avalanche Energy
L = 0.1mH
EAS
140
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
128
51
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
0.97
62.5
UNITS
°C / W
Ver 1.1
1 2013-3-22

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