P2610ADG Datasheet PDF - NIKO-SEM

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P2610ADG
NIKO-SEM

Part Number P2610ADG
Description N-Channel Field Effect Transistor
Page 6 Pages


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NIKO-SEM
N-Channel Enhancement Mode Field
Effect Transistor
P2610ADG
TO-252
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
26mΩ
ID
50A
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
L = 0.1mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
IAS
EAS
PD
Tj, Tstg
1. GATE
2. DRAIN
3. SOURCE
LIMITS
100
±20
50
35.5
150
53
140
128
51
-55 to 150
UNITS
V
V
A
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RJC
Junction-to-Ambient
RJA
1Pulse width limited by maximum junction temperature.
TYPICAL
MAXIMUM
0.97
62.5
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
LIMITS
UNIT
MIN TYP MAX
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current1
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(ON)
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
100
1.7 2.5
3.4
V
VDS = 0V, VGS = ±20V
±250 nA
VDS = 80V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 125 °C
1
A
10
VDS = 10V, VGS = 10V
150
A
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NIKO-SEM
N-Channel Enhancement Mode Field
Effect Transistor
P2610ADG
TO-252
Halogen-Free & Lead-Free
Drain-Source-On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 10V, ID = 25A
VDS = 40V, ID = 25A
DYNAMIC
Input Capacitance
Ciss
Output Capacitance
Coss VGS = 0V, VDS = 25V, f = 1MHz
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Crss
Qg
Qgs
Qgd
VDS =80V, VGS = 10V,
ID = 27.5A
Gate Resistance
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Rg
td(on)
tr
td(off)
tf
VGS = 15mV, VDS = 0V, f = 1MHz
VDD = 50V, ID 25A,
VGS = 10V, RGS = 25Ω
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
Forward Voltage1
IS
VSD IF = 25A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
IF = 25A, dlF/dt = 100A / S
Qrr
1Pulse test : Pulse Width 300 sec, Duty Cycle 2.
2Independent of operating temperature.
21 26 mΩ
38 S
5000
285
189
80
28
23
2
25
250
110
140
pF
nC
Ω
nS
50 A
1.5 V
100 nS
380 nC
REMARK: THE PRODUCT MARKED WITH “P2610ADG”, DATE CODE or LOT #
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NIKO-SEM
N-Channel Enhancement Mode Field
Effect Transistor
P2610ADG
TO-252
Halogen-Free & Lead-Free
Output Characteristics
120 VGS = 10V
100
VGS = 7V
80
60
VGS = 6.5V
40
VGS = 5.5V
20
VGS = 4.8V
0 24 6 8
VDS, Drain-To-Source Voltage(V)
10
Normalized On-Resistance Vs.Temperature
3.0 ID= 25A
2.5
2.0
1.5
1.0
Transfer Characteristics
30 VDS= 25V
25
20
15
Tj=125°C
10
Tj=25° C
Tj=-20° C
5
0
2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5
VGS, Gate-To-Source Voltage(V)
Capacitance-Characteristics
6.00E+03
5.00E+03
Cis s
4.00E+03
3.00E+03
2.00E+03
0.5
VGS= 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature(° C)
1.00E+03
0.00E+00
0
Co s s
Crss
5 10 15 20 25
VDS, Drain-to-Source Voltage(V)
30
Typical Source-Drain Diode Forward Voltage
10 1000
8
ID=27.5A
VDS=50V
6
4
2
0
0 10 20 30 40 50 60 70 80
QG, Total Gate Charge (nC)
100
TJ=150° C
10
TJ=25° C
1
VGS= 0V
0.1
0.0
0.3
0.6 0.9 1.2
1.5 1.8
VSD, Source-to-Drain Voltage(V)
REV 1.3
Nov-25-2009
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NIKO-SEM
N-Channel Enhancement Mode Field
Effect Transistor
P2610ADG
TO-252
Halogen-Free & Lead-Free
Safe Operating Area
1000
Operation in This Area
is Lim ite d by RDS(ON)
100
100us
10
1
1
NOTE :
1.VGS= 10V
2.Tc=25˚ C
3.RθJc = 0.97˚ C/W
4.Single Pulse
10
1m s
10m s
100m s
DC
100
VDS, Drain-To-Source Voltage(V)
1000
Single Pulse Maximum Power
3000
Dissipation
2500
2000
SINGLE PULSE
RθJc = 0.97˚ C/W
Tc=25˚ C
1500
1000
500
0
0.0001
0.001
0.01
0.1
1
Single Pulse Time(s)
10
10 0
D = 0.5
1 0 -1
0 .2
0 .1
0.05
0.02
0 .01
1 0 -2
1 0 -5
T ransient T he rm al R espo nse C u rve
sin g le p u lse
Note :
1 . D uty F a c to r, D = t1/ t2
2 . T J - T C= P *Z θ JC(t)
3 . Z θ JC(t)= r(t)*R θ JC
4. R θJC= 0.97 C /W M ax
P DM
t1
t2
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t1,S qu are W av e P uls e D uration [se c]
101
REV 1.3
Nov-25-2009
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