P2206BT Datasheet PDF - NIKO-SEM

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P2206BT
NIKO-SEM

Part Number P2206BT
Description N-Channel Enhancement Mode Field Effect Transistor
Page 4 Pages


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NIKO-SEM
N-Channel Enhancement Mode
P2206BT
Field Effect Transistor
TO-220
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
60V 22.5mΩ
ID
35A
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 ° C
TC = 100 ° C
Avalanche Current
Avalanche Energy
L = 0.1mH
Power Dissipation
TC = 25 ° C
TC = 100 ° C
Operating Junction & Storage Temperature Range
VDS
VGS
ID
IDM
IAS
EAS
PD
Tj, Tstg
1. GATE
2. DRAIN
3. SOURCE
LIMITS
60
±20
35
22
100
26
33.8
62.5
25
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RJC
Junction-to-Ambient
RJA
1Pulse width limited by maximum junction temperature.
TYPICAL
MAXIMUM
2
62.5
UNITS
°C /W
ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
LIMITS
UNITS
MIN TYP MAX
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State
Resistance1
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(ON)
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
VDS = 0V, VGS = ±20V
VDS = 48V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 125 ° C
VGS = 4.5V, ID = 12A
VGS = 10V, ID = 20A
60
1.3 1.75 2.3
±100
1
10
20 30
17.5 22.5
V
nA
A
mΩ
REV 1.0
1
F-06-5



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NIKO-SEM
N-Channel Enhancement Mode
P2206BT
Field Effect Transistor
TO-220
Halogen-Free & Lead-Free
Forward Transconductance1
gfs VDS = 5V, ID = 20A
DYNAMIC
45
Input Capacitance
Ciss
1042
Output Capacitance
Coss VGS = 0V, VDS = 25V, f = 1MHz
126
Reverse Transfer Capacitance
Crss
88
Gate Resistance
Rg VGS = 0V, VDS = 0V, f = 1MHz
1
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
VGS = 10V
Qg
VGS = 4.5V
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS =30V,ID = 20A
VDD = 30V,
ID 20A, VGS = 10V, RGEN =6Ω
25
14
3.6
9.1
39
23
101
33
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
Forward Voltage1
VSD IF = 20A , VGS = 0V
35
1.3
Reverse Recovery Time
Reverse Recovery Charge
trr IF = 20A , dIF/dt= 100A/μs
Qrr
1Pulse test : Pulse Width 300 sec, Duty Cycle 2.
2Independent of operating temperature.
20
11
S
pF
Ω
nC
nS
A
V
nS
nC
REV 1.0
2
F-06-5



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NIKO-SEM
N-Channel Enhancement Mode
P2206BT
Field Effect Transistor
TO-220
Halogen-Free & Lead-Free
Output Characteristics
30
VGS=10V
VGS=9V
VGS=8V
24 VGS=7V
VGS=6V
VGS=5V
VGS=4.5V
VGS=4V
18
VGS=3.5V
12
6
0
01234
VDS, Drain-To-Source Voltage(V)
Gate charge Characteristics
10 Characteristics
VDS=30V
ID=20A
8
5
6
4
2
0
0 6 12 18 24 30
Qg , Total Gate Charge(nC)
On-Resistance VS Gate-To-Source
0.03Voltage
Transfer Characteristics
30
24
18
12
-20
6
12525
0
01234
VGS, Gate-To-Source Voltage(V)
5
Capacitance Characteristic
1200
1000
CISS
800
600
400
200
0
0
COSS
CRSS
5 10 15 20 25 30
VDS, Drain-To-Source Voltage(V)
On-Resistance VS Drain Current
0.03
0.025
0.02
0.015
ID=20A
0.025
0.02
0.015
VGS=4.5V
VGS=10V
0.01
2
468
VGS, Gate-To-Source Voltage(V)
REV 1.0
10
3
0.01
0
5 10 15 20
ID , Drain-To-Source Current(A)
25
F-06-5



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NIKO-SEM
N-Channel Enhancement Mode
P2206BT
Field Effect Transistor
TO-220
Halogen-Free & Lead-Free
On-Resistance VS Temperature
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
VGS=10V
0.6 ID=20A
0.4
-50
1000
-25 0 25 50 75 100
TJ , Junction Temperature(˚C)
Safe Operating Area
125
150
Operation in This Area
is Limited by RDS(ON)
100
Source-Drain Diode Forward Voltage
100
10
150
25
1
0.1
0.0
0.2 0.4 0.6 0.8 1.0 1.2
VSD, Source-To-Drain Voltage(V)
1.4
Single Pulse Maximum Power Dissipation
300
Single Pulse
250 RθJC = 2˚C/W
TC=25˚C
200
10
NOTE :
1 1.VGS= 10V
2.TC=25˚C
3.RθJC = 2˚C/W
4.Single Pulse
1ms
10ms
100ms
DC
0.1
1
10
VDS, Drain-To-Source Voltage(V)
100
150
100
50
0
0.001
0.01
0.1
1
Single Pulse Time(s)
10
Transient Thermal Response Curve
10
100
REV 1.0
Duty cycle=0.5
0.2
0.1
0.05
0.02
1 0.01
Notes
single pulse
0.1
0.0001
0.001
0.01
0.1
1
T1 , Square Wave Pulse Duration[sec]
4
1.Duty cycle, D= t1 / t2
2.RthJC = 2 /W
3.TJ-TC = P*RthJC(t)
4.RthJC(t) = r(t)*RthJC
10 100
F-06-5



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