P2206BD Datasheet PDF - UNIKC

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P2206BD
UNIKC

Part Number P2206BD
Description N-Channel Enhancement Mode MOSFET
Page 8 Pages


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P2206BD
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
60V 22.5mΩ @VGS = 10V
ID
32A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 60
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC= 25 °C
TC= 100 °C
ID
IDM
32
20
100
Avalanche Current
IAS 26
Avalanche Energy
L=0.1mH EAS 33.8
Power Dissipation
TC= 25 °C
TC= 100°C
PD
50
20
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
2.5
62.5
UNITS
°C / W
REV 1.0
1 2015/6/23



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P2206BD
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V(BR)DSS
VGS(th)
IGSS
IDSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
VDS = 48V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 125°C
60
1.3
1.75 2.3
±100
1
10
V
nA
mA
Drain-Source On-State
Resistance1
RDS(ON)
VGS =10V, ID =20A
VGS =4.5V, ID =12A
17 22.5
19 30
Forward Transconductance1
gfs
VDS =5V, ID =20A
40 S
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
1016
125
81
pF
Gate Resistance
Rg VGS = 0V, VDS = 0V, f = 1MHz
1
Ω
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Qg
VGS = 10V
VGS = 4.5V
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS =30V, ID = 20V
VDS = 30V ,
ID @ 20A, VGS = 10V, RGEN = 6Ω
23.2
13
3.2
7.4
38
24
102
35
nC
nS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current3
IS
Forward Voltage1
VSD IF = 20A, VGS = 0V
32 A
1.3 V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr IF = 20A, dlF/dt = 100A /ms
22 nS
15 nC
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
REV 1.0
2 2015/6/23



No Preview Available !

P2206BD
N-Channel Enhancement Mode MOSFET
REV 1.0
3 2015/6/23



No Preview Available !

P2206BD
N-Channel Enhancement Mode MOSFET
REV 1.0
4 2015/6/23



P2206BD datasheet pdf
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P2206BD pdf
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