P2206BD Datasheet PDF - UNIKC

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P2206BD
UNIKC

Part Number P2206BD
Description N-Channel Enhancement Mode MOSFET
Page 8 Pages


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P2206BD
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
60V 22.5mΩ @VGS = 10V
ID
32A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 60
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC= 25 °C
TC= 100 °C
ID
IDM
32
20
100
Avalanche Current
IAS 26
Avalanche Energy
L=0.1mH EAS 33.8
Power Dissipation
TC= 25 °C
TC= 100°C
PD
50
20
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
2.5
62.5
UNITS
°C / W
REV 1.0
1 2015/6/23

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